ADA-4543 Silicon Bipolar Darlington Amplifi er Data Sheet Description Features Small Signal gain amplifier Avago Technologies ADA-4543 is an economical, easy-to- Operating frequency DC 2.5 GHz use, general purpose silicon bipolar RFIC gain block am- plifi ers housed in a 4-lead SC-70 (SOT-343) surface mount Unconditionally stable plastic package which requires only half the board space 50 Ohms input & output of a SOT-143 package. Flat, Broadband Frequency Response up to 1 GHz The Darlington feedback structure provides inherent Operating Current: 10 to 30 mA broad bandwidth performance, resulting in useful oper- Industry standard SOT-343 package ating frequency up to 2.5 GHz. This is an ideal device for small-signal gain cascades or IF amplifi cation. Lead-free option available ADA-4543 is fabricated using Avagos HP25 silicon bi- Specifications polar process, which employs a double-diff used single 900 MHz, 3.4V, 15 mA (typ.) polysilicon process with self-aligned submicron emitter 15.1 dB associated gain geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The 1.9 dBm P 1dB process utilizes industry standard device oxide isolation 15 dBm OIP 3 technologies and submicron aluminum multilayer inter- 3.7 dB noise figure connect to achieve superior performance, high uniformi- ty, and proven reliability. VSWR < 2 throughput operating frequency Single supply, typical I = 15 mA d Surface Mount Package Applications SOT-343 Cellular/PCS/WLL base stations Wireless data/WLAN Fiber-optic systems ISM Attention: Observe precautions for handling Pin Connections and Package Marking electrostatic sensitive devices. ESD Machine Model (Class A) RFout GND & Vd ESD Human Body Model (Class 1B) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. GND RFin Typical Biasing Configuration Note: V - V V = 5 V Top View. Package marking provides orientation and identification. cc d CC R = c I d R C c bypass 1T = Device Code x = Date code character RFC identifies month of manufacture. C block RF 1Tx RF input output V = 3.4 V d C block 1Tx 1 ADA-4543 Absolute Maximum Ratings Notes: Absolute 1. Operation of this device above any one of Symbol Parameter Units Maximum these parameters may cause permanent damage. I Device Current mA 40 d 2. Ground lead temperature is 25C. Derate 2 P Total Power Dissipation mW 145 6.6 mW/C for TL >128C. diss 3. Junction-to-case thermal resistance P RF Input Power dBm 13 in max. measured using 150C Liquid Crystal T Channel Temperature C 150 Measurement method. j T Storage Temperature C -65 to 150 STG 3 Thermal Resistance C/W 152 jc ADA-4543 Electrical Specifications T = 25C, Zo=50, Pin = -25 dBm, I = 15 mA (unless specified otherwise) A d Symbol Parameter and Test Condition: Frequency Units Min. Typ. Max. Std. Dev. I = 15 mA, Zo = 50 d V Device Voltage I = 15 mA V 3.1 3.4 3.8 d d 2 Gp Power Gain ( S 100 MHz dB 15.7 21 1,2 900 MHz 13.5 15.1 16.5 Gp Gain Flatness 100 to 900 MHz dB 0.4 0.1 to 2 GHz 1.5 F 3 dB Bandwidth GHz 3.6 3dB VSWR Input Voltage Standing Wave Ratio 0.1 to 6 GHz 1.7:1 in VSWR Output Voltage Standing Wave Ratio 0.1 to 6 GHz 1.3:1 out NF 50 Noise Figure 100 MHz dB 3.6 0.16 1,2 900 MHz 3.7 0.18 P Output Power at 1dB Gain Compression 100 MHz dBm 2.5 1dB 1,2 900 MHz 1.9 rd 3 OIP Output 3 Order Intercept Point 100 MHz dBm 14.6 3 1,2,3 900 MHz 15.0 DV/dT Device Voltage Temperature Coefficient mV/C -5.6 Notes: 1. Typical value determined from a sample size of 500 parts from 3 wafers. 2. Measurement obtained using production test board described in the block diagram below. 3. I) 900 MHz OIP test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -25 dBm per tone. 3 II) 100 MHz OIP test condition: F1 = 100 MHz, F2 = 105 MHz and Pin = -25 dBm per tone. 3 50 Ohm 50 Ohm Input Output Transmission Transmission DUT (0.5 dB loss) including Bias (0.5 dB loss) Block diagram of 900 MHz production test board used for V , Gain, P , OIP , and NF measurements. d 1dB 3 Circuit losses have been de-embedded from actual measurements. 2