ADA-4643 Silicon Bipolar Darlington Amplifi er Data Sheet Description Features Avago Technologies ADA-4643 is an economical, easy-to- Small Signal gain amplifi er use, general purpose silicon bipolar RFIC gain block am- Operating frequency DC 2.5 GHz plifi ers housed in a 4-lead SC-70 (SOT-343) surface mount Unconditionally stable plastic package which requires only half the board space 50 Ohms input & output of a SOT-143 package. Flat, Broadband Frequency Response up to 1 GHz The Darlington feedback structure provides inherent Operating Current: 20 to 60 mA broad bandwidth performance, resulting in useful ope- Industry standard SOT-343 package rating frequency up to 2.5 GHz. This is an ideal device for Lead-free option available small-signal gain cascades or IF amplifi cation. Specifi cations ADA-4643 is fabricated using Avagos HP25 silicon bipolar process, which employs a double-diff used single poly- 900 MHz, 3.5 V, 35 mA (typ.) silicon process with self-aligned submicron emitter 17 dB associated gain geometry. The process is capable of simultaneous high f T 13.4 dBm P and high NPN breakdown (25 GHz f at 6 V BVCEO). The 1dB T process utilizes industry standard device oxide isolation 28.3 dBm OIP 3 technologies and submicron aluminum multilayer inter- 4 dB noise fi gure connect to achieve superior performance, high uniformity, VSWR < 2.2 throughput operating frequency and proven reliability. Single supply, typical I = 35 mA d Applications Surface Mount Package Cellular/PCS/WLL base stations SOT-343 Wireless data/WLAN Fiber-optic systems ISM Typical Biasing Confi guration V = 5 V CC V V cc d R = c Pin Connections and Package Marking I d R c C bypass RFout RFC GND & Vd C block RF RF input 2Tx output GND V = 3.5 V RFin d C block Note: Top View. Package marking provides orientation and identifi cation. Attention: Observe precautions for 2T = Device Code handling electrostatic sensitive devices. x = Date code character identifi es month of manufacture. ESD Machine Model (Class A) ESD Human Body Mode (Class 1B) Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. 2Tx 1 ADA-4643 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum I Device Current mA 70 d 2 P Total Power Dissipation mW 270 diss P RF Input Power dBm 18 in max. T Channel Temperature C 150 j T Storage Temperature C -65 to 150 STG 3 Thermal Resistance C/W 152 jc Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Ground lead temperature is 25 C. Derate 6.6 mW/C for TL >109 C. 3. Junction-to-case thermal resistance measured using 150 C Liquid Crystal Measurement method. ADA-4643 Electrical Specifi cations T = 25 C, Zo = 50 , Pin = -25 dBm, I = 35 mA (unless specifi ed otherwise) A d Parameter and Test Condition: Symbol I = 35 mA, Zo = 50 Frequency Units Min. Typ. Max. Std. Dev. d V Device Voltage I = 35 mA V 3.2 3.5 3.9 d d 2 Gp Power Gain ( S ) 100 MHz dB 17.5 21 1,2 900 MHz 15.5 17.0 18.5 Gp Gain Flatness 100 to 900 MHz dB 0.5 0.1 to 2 GHz 1.8 F 3 dB Bandwidth GHz 3.2 3dB VSWR Input Voltage Standing Wave Ratio 0.1 to 6 GHz 2.0:1 in VSWR Output Voltage Standing Wave Ratio 0.1 to 6 GHz 1.6:1 out NF 50 Noise Figure 100 MHz dB 3.9 0.07 1,2 900 MHz 4.0 0.1 P Output Power at 1dB Gain Compression 100 MHz dBm 14.7 1dB 1,2 900 MHz 13.4 rd 3 OIP Output 3 Order Intercept Point 100 MHz dBm 29.0 3 1,2 900 MHz 28.3 DV/dT Device Voltage Temperature Coeffi cient mV/C -5.3 Notes: 1. Typical value determined from a sample size of 500 parts from 3 wafers. 2. Measurement obtained using production test board described in the block diagram below. 3. I) 900 MHz OIP test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -25 dBm per tone. 3 II) 100 MHz OIP test condition: F1 = 100 MHz, F2 = 105 MHz and Pin = -25 dBm per tone. 3 50 Ohm 50 Ohm Input Output Transmission Transmission DUT (0.5 dB loss) including Bias (0.5 dB loss) Block diagram of 900 MHz production test board used for V , Gain, P , OIP , and NF measurements. d 1dB 3 Circuit losses have been de-embedded from actual measurements. 2