ADA-4789 Silicon Bipolar Darlington Amplifier Data Sheet Description Features Avago Technologies ADA-4789 is an economical, easy- Small Signal Gain Amplifier to-use, general purpose silicon bipolar RFIC gain block Operating Frequency: DC 2.5 GHz amplifiers housed in SOT-89 surface mount plastic pack - Unconditionally Stable age. 50 Ohms Input & Output The Darlington feedback structure provides inherent Flat, Broadband Frequency Response up to 1 GHz broad bandwidth performance, resulting in useful oper- Operating Current: 40 80 mA ating frequency up to 2.5 GHz. This is an ideal device for small-signal gain cascades or IF amplification. Industry Standard SOT-89 Package Single Supply ADA-4789 is fabricated using Avagos HP25 silicon bi- polar process, which employs a double-diffused single VSWR < 2 Throughput Operating Frequency poly-silicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high Specifications fT and high NPN breakdown (25 GHz fT at 6V BVCEO). 900MHz, 3.80V, 60mA (Typical) The process utilizes industry standard device oxide isola- 16.50 dB Associated Gain tion technologies and submicron aluminum multi-layer inter-connects to achieve superior performance, high 17.10 dBm P1dB uniformity, and proven reliability. 32.60 dBm OIP3 4.20 dB Noise Figure Package Marking and Pin Connections 900MHz, 4.10V, 80mA (Typical) 16.90 dB Associated Gain 18.80 dBm P1dB 33.20 dBm OIP3 4GX 4.30 dB Noise Figure Applications 3 2 1 1 2 3 Cellular/PCS/WLL Base Stations RFin GND RFout RFout GND RFin Wireless Data/WLAN Top View Bottom View Fiber-Optic Systems Note: Package marking provides orientation and identification ISM 4G = Device Code x = Month code indicates the month of manufacture 1 Table 1. Absolute Maximum Ratings at Tc = +25C Typical Biasing Configuration Symbol Parameter Unit MaxRating V = 5 V V - V CC CC d R = C I Device Current mA 90 I d d R C c bypass 2 P Total Power Dissipation mW 370 diss P RF Input Power dBm 20 in max RFC 0 T Junction Temperature C 150 j C block 0 T Storage Temperature C -65 to 150 stg RF 3Tx RF 3 0 input output q Thermal Resistance C/W 50 jc V = 3.8 V d C block Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. Ground lead temperature is 25C. Derate 20 mW/C for Tc > 131.5 C. 3. Thermal Resistance is measured from junction to board using IR method. Table 2. Electrical Specifications at Tc = +25C Symbol Parameter and Test Condition:Id = 60mA, Zo = 50 W Frequency Units Min. Typ. Max. V Device Voltage V 3.3 3.8 4.3 d G Power Gain 100 MHz dB 15 16.9 18 p 1,2 900 MHz 16.5 2.0 GHz 16.2 G Gain Flatness 100 to 900 MHz dB 0.3 p 0.1 to 2.0 GHz 0.5 F3dB 3dB Bandwidth GHz 4 VSWR Input Voltage Standing Wave Ratio 0.1 to 4.0 GHz 1.3:1 in VSWR Output Voltage Standing Wave Ratio 0.1 to 4.0 GHz 1.5:1 out NF 50W Noise Figure 100 MHz dB 4.1 1,2 900 MHz 4.2 2.0 GHz 4.4 P1dB Output Power at 1dB Gain Compression 100 MHz dBm 16.0 17.7 1,2 900 MHz 17.1 2.0 GHz 16.2 3 OIP3 Output Third Order Intercept Point 100 MHz dBm 27 33.4 1,2,3 900 MHz 32.6 3 2.0 GHz 28.8 0 dV/dT Device Voltage Temperature Coefficient mV/ C -4.9 Notes: 1. Typical value determined from a sample size of 500 parts from 3 wafers. 2. Measurement obtained using production test board described in the block diagram below. 3. i) 100 MHz OIP3 Test Condition: F1 = 100 MHz, F2 = 105 MHz, Pin = -20 dBm per tone. ii)900 MHz OIP3 Test Condition: F1 = 900 MHz, F2 = 905 MHz, Pin = -20 dBm per tone. iii) 2000 MHz OIP3 Test Condition: F1 = 2000 MHz, F2 = 2005 MHz, Pin = -20 dBm per tone. 2