Data Sheet AFBR-S4N44P163 44 NUV-HD Silicon Photo Multiplier Array Description Features The Broadcom AFBR-S4N44P163 is a 44 Silicon Photo High PDE of more than 55% at 420 nm Multiplier (SiPM) array used for ultra-sensitive precision High fill factors measurements of single photons. The pitch of SiPMs is Excellent SPTR and CRT 4 mm in both directions. High packing density of the single Excellent uniformity of breakdown voltage, 180 mV chips is achieved using through-silicon-via (TSV) (3 sigma) technology. Larger areas can be covered with a pitch of 16 Excellent uniformity of gain mm by tiling multiple AFBR-S4N44P163 arrays almost With TSV technology (4-side tilable) without any edge losses. The passivation layer is made by 2 Size 15.9 15.9 mm a glass highly transparent down to UV wavelengths, 2 Cell pitch 30 30 m resulting in a broad response in the visible light spectrum Highly transparent glass protection layer with high sensitivity towards blue- and near-UV region of the Operating temperature range from 20C to +50C light spectrum. The array is best suited for the detection of RoHS and REACH compliant low-level pulsed light sources, especially for detection of Cherenkov- or scintillation light from the most common Applications organic (plastic) and inorganic scintillator materials (for X-ray and gamma ray detection example, LSO, LYSO, BGO, NaI, CsI, BaF, LaBr). This Gamma ray spectroscopy product is lead free and compliant with RoHS and REACH. Safety and security Nuclear medicine Positron emission tomography Life sciences Flow cytometry Fluorescence luminescence measurements Time correlated single photon counting High energy physics Astrophysics Broadcom AFBR-S4N44P163-DS102 November 8, 2018AFBR-S4N44P163 Data Sheet 44 NUV-HD Silicon Photo Multiplier Array Block Diagram Figure 1: AFBR-S4N44P163 Block Diagram of Single SiPM Element Pad Layout The AFBR-S4N44P163 has 32 signal pins. The anode and the cathode of each SiPM chip can be connected separately. The cathodes do not have a common connection on the module. The pad layout is shown in Figure 2. Figure 2: Pad Layout 16 x 0.7 Back side ANODE Pin 1 CC AA CC A A BROADCOM AA CC Data Matrix Code Area AA CC AA CC CC AA AA CC CC AA BOT 1.41 2.63 2.63 1.3 1.3 16 x 0.7 CATHODE NOTE: 1. Dimensions: mm. 2. A stands for anode, C stands for cathode. Broadcom AFBR-S4N44P163-DS102 2 1.3 1.3 1.3 1.3 2.63 2.63 2.63 1.41