ALM-11236 1710 MHz 1850 MHz Low Noise, High Linearity Amplifier Module with Fail-Safe Bypass Feature Data Sheet Description Features Avago Technologies ALM-11236 is an easy-to-use GaAs Very Low Noise Figure MMIC Tower Mount Amplifier (TMA) LNA Module with low Low Bypass IL IL bypass path. The module has low noise and high linearity Good Return Loss achieved through the use of Avago Technologies propri- etary 0.25 mm GaAs Enhancement-mode pHEMT process. Fail-safe Bypass mode All matching components are fully integrated within the High linearity performance module and the 50 ohm RF input and output pins are High isolation LNA mode already internally AC-coupled. This makes the ALM-11236 extremely easy to use as the only external parts are DC Flat gain supply bypass capacitors. For optimum performance GaAs E-pHEMT Technology at other bands, ALM-11036 (776-870 MHz), ALM-11136 Single 5 V power supply (870-915 MHz) and ALM-11336 (1850-1980) are recom- 3 mended. All ALM-11x36 share the same package and pin Compact MCOB package 7.0 x 10.0 x 1.5 mm out configuration. MSL2a Pin Configuration and Package Marking Specifications 3 7.0 x 10.0 x 1.5 mm 36-lead MCOB 1785 MHz 5 V, 99 mA (Typical) 15.9 dB Gain 1 26 2 25 18 dB RL 3 24 0.67 dB Noise Figure 4 23 5 22 17.3 dBm IIP3 6 21 7 20 3.5 dBm Input Power at 1dB gain compression 8 19 0.75 dB Bypass IL Pin Connection 18 dB Bypass RL 4 RF IN 50 dB isolation LNA mode 26 1 23 RF OUT 25 2 28 EXT P2 Applications 24 3 30 EXT P1 23 4 Tower Mount Amplifier (TMA) 22 5 33 Vdd 21 6 Cellular Infrastructure 20 7 Others GND 19 8 Attention: Observe precautions for handling electrostatic sensitive devices. Note: ESD Machine Model = 300 V Package marking provides orientation and identification ESD Human Body Model = 2000 V 11236 = Device Part Number Refer to Avago Application Note A004R: WWYY = Work week and Year of manufacture XXXX = Last 4 digit of Lot number Electrostatic Discharge, Damage and Control. 9 36 18 27 10 35 17 28 16 29 11 34 AVAGO 33 15 30 12 11236 13 32 14 31 WWYY 13 32 14 XXXX 31 15 30 12 33 16 29 11 34 10 35 17 28 18 27 9 36 1 Absolute Maximum Rating T = 25 C A 2 Thermal Resistance Symbol Parameter Units Absolute Max. (V = 5.0 V, I = 100 mA) = 56.2 C/W dd dd jc V Device Voltage, V 5.5 dd Notes: RF output to ground 1. Operation of this device in excess of any of P CW RF Input Power dBm +15 these limits may cause permanent damage. in,max 2. Thermal resistance measured using Infra-Red (V = 5.0 V, I = 100 mA) dd dd Measurement Technique. 3 P Total Power Dissipation W 0.715 diss 3. Power dissipation with unit turned on. Board temperature T is 25 C. Derate at 17.8 mW/C c T Junction Temperature C 150 j for T > 109.8 C. c T Storage Temperature C -65 to 150 STG 1, 4 Electrical Specifications RF performance at T = 25 C, V = 5 V, 1785 MHz, measured on demo board in Figure 1 with component listed in Table1 A dd for DC bypass. Symbol Parameter and Test Condition Frequency (MHz) Units Min. Typ. Max. I Drain Current mA 81 99 117 dd Gain Gain 1710 dB 16 1785 14.5 15.9 17.5 IRL Input Return Loss, 50 source dB 30 ORL Output Return Loss, 50 load dB 28 2 NF Noise Figure 1710 dB 0.75 1785 0.67 0.85 3 IIP3 Input Third Order Intercept Point dBm 14 17.3 IP1dB Input Power at 1 dB Gain Compression dBm 2.55 3.5 Bypass IL Bypass Insertion Loss, 50 load Vdd = 0 V 1785 dB 0.75 1.1 Bypass IRL Input Return Loss, 50 source Vdd = 0 V dB 19 Bypass ORL Output Return Loss, 50 load Vdd = 0 V dB 23 ISOL Bypass Isolation LNA ON Vdd = 5 V dB 56 Notes: 1. Measurements at 1785 MHz obtained using demo board described in Figure 1. 2. For NF data, board losses of the input have not been de-embedded. 3. IIP3 test condition: F = 1785 MHz, F = 1786 MHz with input power of -15 dBm per tone. RF1 RF2 4. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note for more details. 2