ALM-81224 High Linearity 1450 2750 MHz Variable Gain Amplifier Data Sheet Description Features Avago Technologies ALM-81224 is a high linearity vari- High Linearity at low bias current able-gain amplifier module for use in the 1450-2750MHz High max gain: 23.8 dB typ band. Gain control is achieved using a single DC voltage High linearity performance: +16.5 dBm at -65 dBc ACLR input pin. High linearity is achieved through the use of using dual-carrier W-CDMA input signal Avago Technologies proprietary GaAs Enhancement- 1 mode pHEMT process . It is housed in a miniature 6.0 Fully-matched 50 Ohm input and simple output match x 6.0 x 1.0 mm 24-pin Molded Chip On Board (MCOB) Low Noise Figure package. Gain changes monotonically with gain control Built-in attenuator with monotonic response pin voltage. Input is fully matched. Output match can be tuned for optimal performance at a particular frequency Variable Gain range: 38 dB typ band within the VGA operation frequency range using 1 GaAs E-pHEMT Technology common RF board layout. The compact footprint coupled Small package size: 6.0 x 6.0 x 1.0 mm with high linearity and efficiency makes ALM-81224 an ideal choice for Basestation transmitters and receivers and Typical Performances Temperature Compensation Circuitry applications. 2140 MHz 5 V, 383 mA (typ) 23.8 dB Gain at minimum attenuation Component Image +16.5 dBm output power (-65 dBc ACLR) using dual- (6.0 x 6.0 x 1.0) mm 24-lead MCOB carrier W-CDMA input signal with PAPR = 7.5 dB. Note: NF: 2dB max gain and 16 dB min gain Package marking provides orientation and identification P1dB: 27.4 dBm AVAGO 81224 = Device Code Attenuator range: 38 dB with Vc att: (0 V 3.3 V) WWYY = Date Code identifies 81224 month and year of Shutdown current (Vc1, Vc2 = 0 V): < 30 A WWYY manufacturing XXXX XXXX = Last 4 digit of assembly Applications lot number Basestation Transmitter, Receiver and Temperature Compensation Circuits requiring continuously variable gain functionality Pin Configuration Note: 1. Enhancement mode technology employs positive Vgs, thereby Vdd1 GND GND GND GND Vdd2 eliminating the need of negative gate voltage associated with 24 23 22 21 20 19 conventional depletion mode devices. GND 1 18 GND 2 17 RFIN RFOUT Attention: Observe precautions for 3 16 Q1/Q2 GROUND Interstage handling electrostatic sensitive devices. 4 15 GND ESD Machine Model = 50 V 5 14 GND GND ESD Human Body Model = 500 V 6 13 GND GND Refer to Avago Application Note A004R: 7 8 9 10 11 12 Electrostatic Discharge, Damage and Control. Vc att GND Vc1 Vc2 GND Vddbias 1 Table 1. ALM-81224 Absolute Maximum Rating Thermal Resistance 3 Symbol Parameter Units Absolute Maximum Thermal Resistance (V = 5.0 V, I = 320 mA, T = 85C) d d c V Drain Voltage, RF output to ground V 5.5 dd,max = 20C/W jc 4 V Control Voltage V 5.5 ctrl,max Notes: I Device Drain Current mA 500 ds,max 1. Operation of this device in excess of any of 2 these limits may cause permanent damage. P Power Dissipation W 2.75 d 2. Ground Paddle temperature is 25 C. Derate P CW RF Input Power dBm 22 in 50 mW/C for T > 95 C. c 3. Thermal resistance measured using 150 C T Junction Temperature C 150 j Infra-Red Microscopy Technique. T Storage Temperature C -65 to 150 stg 4. Vc1/Vc2 Vdd1/Vdd2. Table 2. Electrical Specifications T = 25 C, Vdd1 = Vdd2 = VBias = 5 V total quiescent current of 383 mA, RF performance at 2140 MHz, CW operation A unless otherwise stated. Symbol Parameter and Test Condition Units Freq. Min. Typ. Max. Vdd Supply Voltage 5 Idq total Quiescent Supply Current mA 290 383 460 Freq Operating Frequency Range MHz 1450 2750 (1) Max Gain Max Gain (minimum attenuation) dB1485 27.0 1840 24.9 1960 24.8 2140 22.2 23.8 2650 21.5 NF Noise Figure (minimum attenuation) dB 2 1 OP1dB Output Power at 1dB Gain Compression dBm 1485 28.0 1840 27.7 1960 28.7 2140 24.7 27.4 2650 28.3 2 OIP3 Output Third Order Intercept Point dBm 44 ACLR ACLR at linear Pout = 12 dBm with dual-carrier dBc 1485 -67.1 1,3 W-CDMA input signal 1840 -68.4 1960 -67.6 2140 -66.6 -63.5 2650 -67.5 Ilinear total Total current draw at Plinear level mA 290 383 460 S11 Input Return Loss, 50 source dB 2140 -15 S22 Output Return Loss, 50 load dB 2140 -10 S12 Reverse Isolation dB 2140 40 Atten Gain attenuation range, Vc att: (0 V 3.3 V) dB 38 Notes: 1. Measured with output match tuned to frequency as specified. See Table 3 for component values. 2. OIP3 test condition: F - F = 1 MHz with input power of -8 dBm per tone measured at worst side band. RF1 RF2 3. Peak-to-average power ratio = 7.5 dB. Measured on Agilent MXA N9020A with low-noise option. Refer to Figure 77 for CCDF. 2