AMMC-5026 2 35 GHz GaAs MMIC Traveling Wave Amplifier Data Sheet Chip Size: 3050 x 840 m (119 x 33 mils) Chip Size Tolerance: 10 m (0.4 mils) Chip Thickness: 100 10 m (4 0.4 mils) Pad Dimensions: 75 x 75 m (2.9 0.4 mils) Description Features Frequency range: 2 35 GHz The AMMC-5026 is a broadband PHEMT GaAs MMIC Traveling Wave Amplifier (TWA) designed for medium Gain: 10.5 dB output power and high gain over the full 2 GHz to 35 GHz Gain flatness: 0.8 dB frequency range. The design employs a 6-section cascode Return loss: connected FET structure to provide afl t gain and medium Input 17 dB, Output: 15 dB power as well as uniform group delay. For improved reli- ability and moisture protection, the die is passivated at Output power (P-1dB): the active areas. 24 dBm at 10 GHz 23 dBm at 20 GHz Applications 22 dBm at 26 GHz Broadband gain block Noise figure (619 GHz): 4 dB Broadband driver amplifier 10 Gb/s Fiber Optics 1 Absolute Maximum Ratings Symbol Parameters/Conditions Units Min. Max. V Positive Drain Voltage V 10 dd I Total Drain Current mA 450 dd V First Gate Voltage V -5 g1 I First Gate Current mA -9 +5 g1 V Second Gate Voltage V -3 +3.5 g2 I Second Gate Current mA -10 g2 P CW Input Power dBm 23 in T Channel Temperature C +150 ch T Operating Backside Temperature C -55 b T Storage Temperature C -65 +165 stg T Max. Assembly Temp (60 sec max) C +300 max Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 1 AMMC-5026 DC Specifications/Physical Properties Symbol Parameters and Test Conditions Units Min. Typ. Max. I Saturated Drain Current mA 250 350 450 dss (V =7 V, V =0 V, V =open circuit) dd g1 g2 V First Gate Pinch-off Voltage V -1.2 p1 (V =7 V, I =0.1 I , V =open circuit) dd dd dss g2 V Second Gate Self-bias Voltage V 3.5 g2 (V =7 V, I =150 mA, V =open circuit) dd dd g2 I First Gate Pinch-off Current mA 75 dsoff (V ) (V =7 V, V =3.5 V, V =open circuit) g1 dd g1 g2 2 Thermal Resistance C/W 28 ch-b (Backside temperature, T = 25C) b Notes: 1. Backside temperature T = 25C unless otherwise noted. b 2. Channel-to-backside Thermal Resistance ( ) = 38C/W at T (T ) = 150C as measured using the liquid crystal method. Thermal Resistance ch-b channel c at backside temperature (T ) = 25C calculated from measured data. b 3, 4 RF Specifications (V = 7V, I (Q) = 150 mA, Z = Z = 50) dd dd in 0 Symbol Parameters and Test Conditions Units Min. Typ. Max. 2 S Small-signal Gain dB 8.5 10.5 12.5 21 2 S Small-signal Gain Flatness dB 0.75 1.5 21 RL Input Return Loss dB 13 17 in RL Output Return Loss dB 12 15 out 2 S Isolation dB 23 26 12 P Output Power 1 dB Gain Compression f = 10 GHz dBm 22 24 -1dB P Saturated Output Power f = 10 GHz dBm 26 sat rd OIP3 Output 3 Order Intercept Point, dBm 31 RF = RF = - 20 dBm, f = 10 GHz, f = 2 MHz in1 in2 NF Noise Figure f = 10 GHz dB 3.6 f = 20 GHz dB 4.3 H2 Second Harmonic (P = 12 dBm at 10 GHz) dBc -20 -17.5 in H3 Third Harmonic (P = 12 dBm at 10 GHz) dBc -30 -28 in Notes: 1. Data measured in wafer form, T = 25C. chuck 2. 100% on wafer RF test is done at frequency = 2, 10, 22, 26.5, and 35 GHz, except as noted. 2