AMMC - 5618 6 - 20 GHz Amplifier Data Sheet Chip Size: 920 x 920 m (36.2 x 36.2 mils) Chip Size Tolerance: 10m (0.4 mils) Chip Thickness: 100 10m (4 0.4 mils) Pad Dimensions: 80 x 80 m (3.1 x 3.1 mils or larger) Description Features Avago Technologies AMMC-5618 6-20 GHz MMIC is an Frequency Range: 6 - 20 GHz efficient two-stage amplifier designed to be used as a High Gain: 14.5 dB Typical cascadable intermediate gain block for EW applications. Output Power: 19.5 dBm Typical In communication systems, it can be used as a LO buffer, or as a transmit driver amplifier. It is fabricated using a Input and Output Return Loss: < -12 dB PHEMT integrated circuit structure that provides excep- Flat Gain Response: 0.3 dB Typical tional efficiency and flat gain performance. During typi - cal operation with a single 5-V supply, each gain stage is Single Supply Bias: 5 V 107 mA biased for Class-A operation for optimal power output with minimal distortion. The RF input and output have 1 matching circuitry for use in 50-W environments. The AMMC-5618 Absolute Maximum Ratings backside of the chip is both RF and DC ground. This helps Symbol Parameters/ Conditions Units Min. Max. simplify the assembly process and reduces assembly re- lated performance variations and costs. For improved re- V , V Drain Supply Voltage V 7 D1 D2 liability and moisture protection, the die is passivated at V Optional Gate Voltage V -5 +1 G1 the active areas. The MMIC is a cost effective alternative to hybrid (discrete FET) amplifiers that require complex V Optional Gate Voltage V -5 +1 G2 tuning and assembly processes. I Drain Supply Current mA 70 D1 Applications I Drain Supply Current mA 84 D2 Driver/Buffer in microwave communication systems P RF Input Power dBm 20 in Cascadable gain stage for EW systems T Channel Temp. C +150 ch Phased array radar and transmit amplifiers T Operating Backside Temp. C -55 b T Storage Temp. C -65 +165 stg T Maximum Assembly Temp. C +300 max (60 sec max) Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. Note: These devices are ESD sensitive. The following precautions are strongly recommended: Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when handling these devices. 1 1 AMMC-5618 DC Specifications / Physical Properties Symbol Parameters and Test Conditions Unit Min. Typical Max. V ,V Recommended Drain Supply Voltage V 3 5 7 D1 D2 I First stage Drain Supply Current mA 48 D1 (V = 5V, V = Open or Ground) D1 G1 I Second stage Drain Supply Current mA 59 D2 (V = 5V, V = Open or Ground) D2 G2 I + I Total Drain Supply Current mA 107 140 D1 D2 (V = V = Open or Ground, V = V = 5 V) G1 G2 D1 D2 2 Thermal Resistance C/W 22 ch-b (Backside temperature (Tb) = 25C Notes: 1. Backside temperature T = 25C unless otherwise noted b 2. Channel-to-backside Thermal Resistance ( ) = 32C/W at T (T ) = 150C as measured using infrared microscopy. ch-b channel c Thermal Resistance at backside temperature (T ) = 25C calculated from measured data. b 3, 5 AMMC-5618 RF Specifications (T = 25C, V = 5 V, I = 107 mA, Z = 50 ) b DD DD 0 Symbol Parameters and Test Conditions Unit Min. Typical Max. 2 S Small-signal Gain dB 12.5 14.5 21 2 D S Small-signal Gain Flatness dB 0.3 21 RL Input Return Loss dB 9 12 in RL Output Return Loss dB 9 12 out 2 S Isolation dB 40 45 12 P Output Power at 1dB Gain Compression 20 GHz dBm 17.5 19.5 -1dB P Saturated Output Power (3dB Gain Compression) 20 GHz dBm 20.5 sat OIP3 Output 3rd Order Intercept Point 20 GHz dBm 26 4 DS / DT Temperature Coefficient of Gain dB/C -0.023 21 NF Noise Figure 20 GHz dB 4.4 6.5 Notes: 3. 100% on-wafer RF test is done at frequency = 6, 13 and 20 GHz, except as noted. 4. Temperature Coefficient of Gain based on sample test 5. All tested parameters guaranteed with measurement accuracy 1.5dB for S12, 1dB for S11, S21, S22, P1dB and 0.5dB for NF. 2