AMMC-6120 8 24 GHz Output 2 Active Frequency Multiplier Data Sheet Chip Size: 1600 x 1000 m (64 x 40 mils) Chip Size Tolerance: 10 m ( 0.4 mils) Chip Thickness: 100 10 m (4 0.4 mils) Pad Dimensions: 120 x 80 m (5x3 0.4 mils) Description Features Input frequency range: 4-10 GHz Avago Technologies AMMC-6120 is an easy-to-use x2 Broad input power range: -11 to +5 dBm active frequency multiplier MMIC designed for com- Output power: +14 dBm (Pin = +3 dBm) mercial communication systems. Though capable of doubling to 24 GHz with reduced fundamental suppres- Fundamental Suppression of 25 dBc sion, the MMIC is designed to take a 4 to 10 GHz input 50 input and output match and double it to 8 to 24 GHz. It has integrated output Supply bias of -1.4 V, 5 V and 85 mA amplifier, matching harmonic suppression, and bias networks. The input/output are matched to 50 Applications and fully DC blocked. The MMIC is fabricated using Microwave radio systems PHEMT technology. The backside of this die is both RF Satellite VSAT, DBS Up/Down Link and DC ground. This helps simplify the assembly process LMDS & Pt-Pt mmW Long Haul and reduces assembly related performance variations and costs. For improved reliability and moisture protec- Broadband Wireless Access (including 802.16 and 802.20 WiMax) tion, the die is passivated at the active areas. This MMIC is a cost effective alternative to bulky hybrid FET and diode WLL and MMDS loops doublers that require high input drive power, have high C.L. and poor fundamental suppression. 1 AMMC-6120 Absolute Maximum Ratings Attention: Observe precautions for Symbol Parameters/Conditions Units Min. Max. handling electrostatic sensitive devices. V Positive Drain Voltage V 7 ESD Machine Model (Class A) d ESD Human Body Model (Class 0) V Gate Supply Voltage V -3.0 0.5 g Refer to Avago Application Note A004R: I Drain Current mA 120 d Electrostatic Discharge Damage and Control. P CW Input Power dBm 15 in T Operating Channel Temp. C +150 ch T Storage Case Temp. C -65 +150 stg T Maximum Assembly Temp. C +300 max (60 sec. max.) Note: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 1 AMMC-6120 DC Specifications/Physical Properties Symbol Parameters and Test Conditions Units Min. Typ. Max. I Drain Supply Current mA 80 85 105 dq V Gate Supply Operating Voltage V -1.5 -1.4 -1.0 g 2 q Thermal Resistance ch-b (Backside Temperature, T = 25C) C/W 25 b Notes: 1. Ambient operational temperature T = 25C unless otherwise noted. A 2. Channel-to-backside Thermal Resistance (q ) = 26C/W at T (T ) = 34C as measured using infrared microscopy. Thermal Resistance at ch-b channel c backside temperature (T ) = 25C calculated from measured data. b 3,4,5 AMMC-6120 RF Specifications T = 25C, V = 5 V, V =-1.4V, I = 85 mA, Z = 50 A dd g d(Q) o Symbol Parameters and Test Conditions Units Minimum Typical Maximum Sigma Fin Input Frequency GHz 4 to 10 Fout Output Frequency GHz 8 to 24 4 Po Output Power dBm 10.5 14 0.6 Fo Fundamental Isolation dBc 18 25 1.8 (referenced to Po) rd 3Fo 3 Harmonic Isolation dBc 25 2.5 (referenced to Po) P Input Power at 1dB Gain Compression dBm +1 -1dB 6 RLin Input Return Loss dB -15 6 RLout Output Return Loss dB -9 SSB Single Sideband Phase Noise DBc/Hz -135 (100 KHz offset) Notes: 3. Small/Large -signal data measured in wafer form T = 25C. A 4. 100% on-wafer RF test is done at Pin = +3 dBm, output frequency = 10, 16, and 20 GHz. 5. Specifications are derived from measurements in a 50- W test environment. Aspects of the multiplier performance may be improved over a more narrow bandwidth by application of additional matching. 2