AMMC-6140 20 40 GHz Output x2 Active Frequency Multiplier Data Sheet Chip Size: 1300 x 900 m (51 x 35 mils) Chip Size Tolerance: 10 m (0.4 mils) Chip Thickness: 100 10 m (4 0.4 mils) Pad Dimensions: 120 x 80 m (5x3 0.4 mils) Description Features Avagos AMMC-6140 is an easy -to-use x2 active frequency Input frequenc ry ange: 1020 GHz multiplier MMIC designed for commercial communica- Broad input power range: -9 to +7 dBm tion sy stems. The MMIC takes a 10 to 20 GHz input signal Output power: -1 to 0 dBm (Pin = +4dB) and doubles it to 20 to 40 GHz. It could also be used between 910 GHz and 2022 GHz with slight degrada- Fundamental suppression of 25 dBc tion in Conversion Loss or Fundamental Suppression. It 50 input and output match has an integrated matching, harmonic suppression, and Suppl bias of -1.2Vy , 4.5V and 27 mA bias network. The input/output are matched to 50 and fully DC blocked. The MMIC is fabricated using PHEMT technology . The backside of this die is both RF and DC Applications ground. This helps simplify the assembly process and Microwave radio sy stems reduces assembly -related performance variations and costs. For improved reliability and moisture protection, Satellite VSAT, DBS Up/Down Link the die is passivated at the active areas. This MMIC is a LMDS & Pt-Pt mmW Long Haul cost effective alternative to bulk y h ybrid FET and diode Broadband Wireless Access doublers that require high input drive levels, have high (including 802.16 and 802.20 WiMax) conversion loss and poor fundamental suppression. WLL and MMDS loops 1 Absolute Maximum Ratings Symbol Parameters/Conditions Units Min. Max. V Positive Drain Voltage V 7 d Attention: Observe precautions for V Gate Supply Voltage V -3.0 0.5 g handling electrostatic sensitive devices. I Drain Current mA -3 d ESD Machine Model (Class A) P CW Input Power dBm 15 ESD Human Body Model (Class 0) in Refer to Avago Application Note A004R: T Operating Channel Temperature C +150 ch Electrostatic Discharge Damage and Control. T Storage Case Temperature C -65 +150 stg T Maximum Assembl y Temp C +300 max (60 sec max) Note: 1. Operation in excess of an one of these cy onditions ma y result in permanent damage to this device. 1 AMMC-6140 DC Specifications/Physical Properties Symbol Parameters and Test Conditions Units Min. Typ. Max. I Drain Supply Current (under an RF poy wer drive and temperature) (V = 4.5V) mA 27 40 d d V Gate Supply Operating Voltage V -1.5 -1.2 -1.0 g 2 Thermal Resistance (Backside Temp. T = 25C) C/W 25 ch-b b Notes: 1. Ambient operational temperature T = 25C unless otherwise noted. A 2. Channel-to-backside Thermal Resistance ( ) = 26C/W at T (T ) = 34C as measured using infrared microscopy . Thermal Resistance at ch-b channel c backside temperature (T ) = 25C calculated from measured data. b 3, 4, 5 RF Specifications (T = 25C, V = 4.5 V, I = 27 mA, Z = 50) A d d(Q) 0 Symbol Parameters and Test Conditions Units Minimum Typical Sigma Fin Input Frequency GHz 10 to 20 Fout Output Frequency GHz 20 to 40 6 Po Output Power dBm -2 -1 0.4 Fo Fundamental Isolation (referenced to Po): 20 36 GHz dBc 20 30 5.0 3640 GHz dBc 14 16 1.0 rd 3Fo 3 Harmonic Isolation (referenced to Po) dBc 25 1.2 P Output Power at 1dB Gain Compression dBm +5 -1dB 6 RLin Input Return Loss dB -15 6 RLout Output Return Loss dB -10 SSB Single Sideband Phase Noise (100 KHz offset) dBc/Hz -135 Notes: 3. Small/large signal data measured in wafer form T = 25C. A 4. 100% on-wafer RF test is done at Pin = +4 dBm and output frequenc = 20, 28, 36 and 40 GHy z. 5. Specifications are derived from measurements in a 50 test environment. Aspects of the multiplier performance ma y be improved over a nar - rower bandwidth by application of additional matching. nd rd Typical distribution of Pout, 2 Harmonic and 3 Harmonic Suppression (Fin = 14 GHz). Based on 2500 parts sampled over several production lots. h hh hh 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 -2 -1 2Fo Pout (dBm) 28G Hz Fo Suppression (dBm) 14 GHz 3Fo Suppression (dBm) 42 GHz 2