AMMC-6232 8 to 32 GHz GaAs High Linearity Low Noise Amplifier Data Sheet Chip Size: 800 m x 2000m (31.5 x 78.74 mils) Chip Size Tolerance: 10 m (0.4 mils) Chip Thickness: 100 10 m (4 0.4 mils) Pad Dimensions: 100 x 100 m (4 x 4 mils) Description Features 800mx 2000m Die Siz e Avago Technologies AMMC-6232 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier Unconditionally Stable that operates from 18 GHz to 32GHz. The wide band and Specifications (Vdd = 4.0V, Idd = 135mA) unconditionally stable performance makes this MMIC ideal as a primary or sub-sequential low noise block or RF Frequencies: 18 - 32 GHz a transmitter or LO driver. The MMIC has 4 gain stages HighO utput IP3: 29dBm and requires a 4V, 135mA power supply for optimal HighSmall-Sig nalG ain: 27dB performance. The two gate bias voltages can be combined for ease of use or separated for more control flexibility. DC- Typical Noise Figure:2.8dB block capacitors are integrated at the input and output Input,O utputM atch: -10dB stages. Since this MMIC covers several bands, it can reduce part inventory and increase volume purchase options The Applications MMIC is fabricated using PHEMT technology to provide MicrowaveR adiosy stems exceptional low noise, gain and power performance. The Satellite VSAT, DBS Up/Down Link backside of the chip is both RF and DC ground which LMDS& P t-PtmmW L ong Haul helps simplify the assembly process and reduce assembly related performance variationsand c ost. Broadband WirelessA ccess (including 802.16 and 802.20 WiMax) Attention:Observe precautions for WLL and MMDS loops handling electrostaticsensitive devices. Note: ESD Machine Model (Class A) 1. ThisMMIC uses depletion modepHEM T devices. ESD Human Body Model (Class A) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control 1 Absolute Maximum Ratings Parameters / Conditions Symbol Unit Max Drain to Ground Voltage Vdd V 5.5 Gate-Drain Voltage Vgd V -8 Drain Current Idd mA 200 Gate Bias Voltage Vg V +0.8 GateBias Current Ig mA 1 RF CW InputP ower Max Pin dBm 15 Max channel temperature Tch C +150 Storage temperature stg C -65 +150 Maximum Assembly Temp Tmax C 260 for 20s Notes 1. Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vdd, Vgd, Idd Vg, Ig and Pin were determined at an ambientt emperature of 25 C unless notedother wise. 2 DC Specifications/ Physical Properties Parameter and Test Condition Symbol Unit Min Typ Max Drain Supply Current (Vd=4.0 V) Idd mA 135 150 Drain Supply Voltage Vd V 3 4 5 Gate Bias Current Ig mA 0.1 Gate Bias Voltage Vg V -1.3 -0.95 -0.55 Thermal Resistance(3) jc C/W 35.1 2. Ambient operationalt emperature TA=25C unlessnot ed 3. Channel-to-backside Thermal Resistance (Tchannel = 34 C) as measured using infrared microscopy. Thermal Resistance at backside temp. (Tb) = 25C calculated from measured data. 4 AMMC-6232 RF Specifications T = 25 C, Vdd= 4.0 V, Idd = 135mA, Zo=50 A Spec Frequency Parameters and Test Conditions Symbol Unit (GHz) Min Typ Max (4) Small signal gain AGain dB 20 23 32 26 23 26.7 31 23 24.6 (4) Noise Figure into50 W NF dB 20 3.2 4.5 26 3.3 4.5 31 4 4.5 (4) Output Power at1dB Gain Compression P1dB dBm 20, 26, 31 15 20 (4) Output Third Order Intercept Point OIP3 dBm 20 26 28 26 26 28 31 26 27 Isolation S12 dB 20,26, 31 -50 Input ReturnL oss S11 dB 20, 26, 31 -10 Output Return Loss S22 dB 20, 26,31 -10 4. All tested parameters guaranteed with measurement accuracy5dBm f or OPI3 and 2dB for gain, NF and P1dB. 2