AMMP-6120 8-24 GHz x2 Frequency Multiplier Data Sheet Description Features 5x5mm Surface Mount Package Avago Technologies AMMP-6120 is an easy-to-use in- tegrated frequency multiplier (x2) in a surface mount Frequency Range : 8-24 GHz output package designed for commercial communication (Useable to 26 GHz) systems. The MMIC takes a 4 to 12 GHz input signal and Broad input power range: -11 to +5 dBm doubles it to 8 to 24 GHz. It has integrated amplification, Output Power : +16 to +18 dBm matching, harmonic suppression, and bias networks. The input/output are matched to 50 and fully DC blocked. Harmonic Suppression : 20 dBc (Fundamental) The MMIC is fabricated using PHEMT technology. DC requirements : -1.4V and 5V, 112 mA Pin= The backside of the package is both RF and DC ground. +3dBm This helps simplify the assembly process and reduces Applications assembly related performance variations and costs. The surface mount package allows elimination of chip & wire Microwave Radio systems assembly for lower cost. This MMIC is a cost effective al- Satellite VSAT and DBS systems ternative to hybrid (discrete-FET), passive, and diode 802.16 & 802.20 WiMax BWA systems doublers that require complex tuning and assembly pro- cesses. WLL and MMDS loops Package Diagram Functional Block Diagram Vd Vg NC Vd Vg 1 2 3 1 2 3 Pin Function 1 Vd RF IN 8 4 RF OUT 2 Vg RFin 8 X2 4 RFout 3 4 RF Out 5 6 7 6 5 7 8 RF In NC NC NC 7 6 5 top view package base: RF and DC GND RoHS-Exemption Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) = 40V ESD Human Body Model (Class 1A) = 250V Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. Please refer to hazardous substances table on page 7. Note: MSL Rating = Level 2AElectrical Specifications 1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25C. 2. Pre-assembly into package performance verified 100% on-wafer. 3. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies. 4. Specifications are derived from measurements in a 50 test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (opt) matching. Table 1. RF Electrical Characteristics TA=25C, Vd=50V, Vg=-1.4V, Idq=85mA, Zin=Zout=50 Parameter Min Typ. Max Unit Output Power, Pout 13 16 dBm Input Power at 1dB Gain Compression, 2 dBm IP-1dB Input Return Loss, RLin -15 dB Output Return Loss, RLout -10 dB Fundamental Suppresion, Sup 18 25 dBc 3rd Harmonic Suppression, Sup3 25 dBc 4th Harmonic Suppression, Sup4 35 dBc Single Side Band Phase Noise, SSBPN -140 dBc ( 100kHz offset, fout=15.6GHz) Table 2. Recommended Operating Range 1. Ambient operational temperature TA = 25C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34C) as measured using infrared microscopy. Thermal Re- sistance at backside temperature (Tb) = 25C calculated from measured data. Description Min. Typical Max. Unit Comments Drain Supply Current, Id 85 110 mA Vd = 5V, Under any RF power drive and temperature Gate Current, Ig 9 uA Table 3. Thermal Properties Parameter Test Conditions Value Thermal Resistance, qch-b Channel-to-backside Thermal Resistance Tchannel(Tc)=34C qch-b = 34 C/W Thermal Resistance at backside temperature Tb=25C Absolute Minimum and Maximum Ratings Table 4. Minimum and Maximum Ratings Description Min. Max. Unit Comments Drain Supply Voltage, Vd 7 V Gate Supply Voltage, Vg -3.0 +0.5 V Drain Current, Idq 120 mA CW Input Power, Pin 15 dBm Channel Temperature, Tch +150 C Storage Temperature , Tstg -65 +150 C Maximum Assembly Temperature, Tmax +300 C 60 second maximum Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2