AMMP-6220 6-20 GHz Low Noise Amplifier Data Sheet Description Features Avagos AMMP-6220 is a high gain, low-noise ampli- 5x5 mm surface mount package fier that operates from 6 GHz to 20 GHz. The LNA is Broad Band performance 6-20 GHz designed to be a easy-to-use component for any sur- Low 2.5 dB typical noise figure face mount PCB application. The broad and uncondi- tionally stable performance makes this LNA ideal for High 22 dB typical gain primary, sub-sequential or driver low noise gain stag- 50 W input and output match es. Intended applications include microwave radios, Single 3 V (55 mA) supply bias 802.16, automotive radar, VSAT, and satellite receivers. Since one part can cover several bands, the AMMP-6220 100% RF test in package can reduce part inventory and increase volume pur- Applications chase options. The LNA has integrated 50 W I/O match, DC blocking, self-bias and choke to eliminate complex Microwave radio systems tuning and assembly processes typically required by hy- Satellite VSAT brid (discrete-FET) amplifiers. The package is full SMT WLL and MMDS loops compatible with backside grounding and I/O to simplify assembly. Functional Block Diagram Package Diagram 1 2 3 PIN FUNCTION NC Vd NC 1 2 V 1 2 3 d 3 8 4 4 RF out 5 100 pF 100 pF 6 RF IN 8 4 RF OUT 7 8 RF in 7 6 5 PACKAGE 7 6 5 BASE GND NC NC NC Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) = 40V ESD Human Body Model (Class 1A) = 300V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Note: MSL Rating = Level 2AElectrical Specifications 1. Small/Large -signal data measured in a fully de-embedded test fixture form T = 25C. A 2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6220 published specifications. 3. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies. 4. Specifications are derived from measurements in a 50 W test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (opt) matching. Table 1. RF Electrical Characteristics Parameter Min Typ. Max Sigma Unit Small-signal Gain, Ga 22 0.5 dB Noise Figure into 50 , NF 2.5 0.2 dB Output Power at 1dB Gain Compression, P-1dB +10 0.8 dBm Third Order Intercept Point +20 1.1 dBm f=100MHz Pin=-20dBm, OIP3 Input Return Loss, RLin -12 0.3 dB Output Return Loss, Rlout -16 0.7 dB Reverse Isolation, Isol -45 0.5 dB Table 2. Recommended Operating Range 1. Ambient operational temperature TA = 25C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25C calculated from measured data. Specifications Description Min. Typical Max. Unit Comments Drain Supply Current, Id 55 70 mA (Vd = 3 V, Under any RF power drive and temperature) Table 3. Thermal Properties Parameter Test Conditions Value Thermal Resistance, qch-b qch-b = 27 C/W Absolute Minimum and Maximum Ratings Table 4. Minimum and Maximum Ratings Specifications Description Pin Min. Max. Unit Comments Drain Supply Voltage Vd 7 V Drain Current Id 100 mA RF Input Power (Pin) RFIN 15 dBm CW Channel Temperature +150 C Storage Temperature -65 +150 C Maximum Assembly Temperature +300 C 60 second maximum Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2