AMMP-6222 7 to 21 GHz GaAs High Linearity LNA in SMT Package Data Sheet Description Features Avago Technologies AMMP-6222 is an easy-to-use Surface Mount Package, 5.0 x 5.0 x 1.25 mm broadband, high gain, high linearity Low Noise Amplifier Single Positive Bias Pin in a surface mount package. The wide band and Selectable Output Power / Linearity unconditionally stable performance makes this MMIC ideal as a primary or sub-sequential low noise block or a No Negative Gate Bias transmitter or LO driver. The MMIC has 3 gain stages and a selectable pin to switch between low and high current, Specifications (Vdd = 4.0V, Idd = 120mA) corresponding with low and high output power and RF Frequencies: 7 - 21 GHz linearity. In the high current, high output power state, High Output IP3: 29dBm it requires a 4V, 120mA supply. In the low current, low output power state, the supply is reduced to 4V, 95mA. High Small-Signal Gain: 24dB Since this MMIC covers several bands, it can reduce part Typical Noise Figure: 2.3dB inventory and increase volume purchase options The MMIC is fabricated using PHEMT technology. The surface Input, Output Match: -10dB mount package eliminates the need of chip & wire Applications assembly for lower cost. This MMIC is fully SMT compatible with backside grounding and I/Os. Microwave Radio systems Satellite VSAT, DBS Up/Down Link Package Diagram LMDS & Pt-Pt mmW Long Haul NC Vd NC Broadband Wireless Access (including 802.16 and 802.20 WiMax) 1 2 3 WLL and MMDS loops Functional Block Diagram RF IN 8 4 RF OUT Pin Function 1 2 3 1 NC 2 Vd 100pF 3 NC 7 6 5 4 RFout 8 4 NC NC Current Sel 5 Current Sel 6 NC Note: 7 NC 1. This MMIC uses depletion mode pHEMT devices. 8 RFin 7 6 5 Top view Package base: GND Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) = 60V ESD Human Body Model (Class 0) = 150V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Note: MSL Rating = Level 2AElectrical Specifications 1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25C. 2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6222 published specifications. 3. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies. 4. Specifications are derived from measurements in a 50 test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (opt) matching. 5. All tested parameters guaranteed with measurement accuracy +/-0.5dB for gain and +/-0.3dB for NF in the high output power configuration. Table 1. RF Electrical Characteristics TA=25C, Id=120mA, Vd=4.0V, Zo=50 High Output Power Configuration Lower Output Power Configuration Parameter Min Typical Max Min Typical Max Unit Comment Drain Current, Id 120 95 mA Small Signal Gain, Gain 19 24 23 dB Test frequency = 8, 14, 18 GHz Noise Figure into 50 , NF 2.3 3.5 2.3 dB Test frequency = 8, 14, 18 GHz Output Power at 1dB 15.5 14 dBm Gain Compression, P1dB Output Power at 3dB 17.5 16 dBm Gain Compression, P3dB Output Third Order 29 27 dBm Intercept Point, OIP3 Isolation, Iso -45 -45 dB Input Return Loss, Rlin -10 -10 dB Output Return Loss, RLout -10 -10 dB Table 2. Recommended Operating Range 1. Ambient operational temperature TA = 25C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25C calculated from measured data. Description Min. Typical Max. Unit Comments Drain Supply Current, Id 80 120 160 mA Vd = 4.5 V, Under any RF power drive and temperature Drain Supply Voltage, Vd 3 4 5 V 2