AMMP-6232 18 to 32 GHz GaAs High Linearity LNA in SMT Package Data Sheet Description Features Surface Mount Package, 5.0 x 5.0 x 1.25 mm Avagos AMMP-6232 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier in a surface Unconditionally Stable mount package. The wide band and unconditionally 50 W Input and Output Match stable performance makes this MMIC ideal as a primary or sub-sequential low noise block or a transmitter driver. Specifications (Vdd = 4.0V, Idd = 138mA) The MMIC has 4 gain stages and requires a 4V, 138mA RF Frequencies: 18 - 32 GHz power supply for optimal performance. Since this MMIC High Output IP3: 29dBm covers several bands, it can reduce part inventory and increase volume purchase options The MMIC is fabricated High Small-Signal Gain: 23dB using PHEMT technology. The surface mount package Typical Noise Figure: 3dB eliminates the need of chip & wire assembly for lower cost. This MMIC is fully SMT compatible with backside Applications grounding and I/Os. Microwave Radio systems Satellite VSAT, DBS Up/Down Link Package Diagram LMDS & Pt-Pt mmW Long Haul NC Vdd NC Broadband Wireless Access 1 2 3 (including 802.16 and 802.20 WiMax) WLL and MMDS loops Functional Block Diagram RF IN 8 4 RF OUT PinFunction 12 3 1 2Vdd 100pF 7 6 5 3 4RFout 8 4 NC NC Vg 5 6 Vg Note: 100pF 1. This MMIC uses depletion mode pHEMT devices. 7 2. Negative voltage is used for the gate bias 8RFin 7 6 5 Top view Package base: GND Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) =60V ESD Human Body Model (Class 1A) = 250V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Note: MSL Rating = Level 2AElectrical Specifications 1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25C. 2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6220 published specifications. 3. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies. 4. Specifications are derived from measurements in a 50 test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (opt) matching. 5. All tested parameters guaranteed with measurement accuracy +/-1.5 dB for gain and +/-0.4dB for NF Table 1. RF Electrical Characteristics TA=25C, Vdd=4.0V, Idd=135mA, Zo=50 Parameter Min Typ. Max Unit Comment Small Signal Gain, Gain 19 23 dB Test Frequency = 20, 26, 29 GHz Noise Figure into 50 , NF 3 4.5 dB Test Frequency = 20, 26, 29 GHz Output Power at 1 dB Gain Compression, P-1dB 18 dBm Output Power at 3 dB Gain Compression, Psat 20 dBm Output Third Order Intercept Point, OIP3 29 dBm Isolation, Iso -45 dB Input Return Loss, RLin -10 dB Output Return Loss, RLout -10 dB Table 2. Recommended Operating Range 1. Ambient operational temperature TA = 25C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25C calculated from measured data. Description Min. Typical Max. Unit Comments Drain Supply Current, Idd 135 150 mA Vd = 4.5 V, Under any RF power drive and temperature Drain Supply Voltage, Vd 3 4 5 V Gate Bias Current, Ig 0.1 mA Gate Bias Voltage, Vg -1.1 -0.95 -0.8 V 2