AMMP-6408 6 to 18 GHz 1 W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6408 MMIC is a broadband W power 5 x 5 mmSur face Mount Package amplifier in a surface mount package designed for use Wide frequency range 6-8 GH z in transmitters that operate in various frequency bands between 6 GHz and 8 GHz. At 8 GHz, it provides 29 dBm Highly linear:OIP3 = 38 dBm of output power (P-dB) and 20 dB of small-signal gain IntegratedRF power detector from a small easy-to-use device. This MMIC optimized ESD protection (50 V MM, and250 VHBM) for linear operation with an output third order intercept point (OIP3) of 38 dBm. Input portpar tially matched (For narrowband applications, customer may obtain Pin Connections (Top View) optimum matching and gain with an additional matching circuit.) 1 2 3 Specifications (Vd = 5 V, Idsq = 650 mA) Frequency range6 to 8 GHz Small signal gain of8 dB Return loss: input: -3 dB, Output: -9 dB 8 4 High Power: 8 GHz, P-dB = 29 dBm Application Microwave radio systems 7 6 5 Satellite VSAT, DBS Up/Down Link PACKAGE LMDS& P t-Pt mmWL ong Haul PIN FUNCTION BASE Broadband wireless access (including 802. 6 and 1 Vgg GND 2 Vdd 802.20 WiMax) 3 DET O WLL andMMDS loops 4 RF out 5 DER R 6 Vdd 7 Vgg Attention: Observe precautions for 8 RF in handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1A) Refer to Avago Technologies Application Note A004R: Electrostatic Discharge, Damage and Control. Note: This MMIC uses depletion mode pHEMT devices. Negative supply is used for the DC gate biasing. 1 Absolute Maximum Ratings 1 Symbol Parameters Units Value Notes V Positive Supply Voltage V 6 note2 d V Gate Supply Voltage V -3 to 0.5 g I Drain Current mA 900 d P Power Dissipation W 4.6 note 2,3 D P CW Input Power dBm 23 note 2 in T Maximum Operating Channel Temperature C +55 note4,5 ch,max T Storage Case Temperature C -65t o +55 stg T MaximumA ssembly Temp(20 sec. max.) C +260 max Notes: . Operation in excess of any one of these conditions may result in permanent damaget o this device. 2. Combinationsof supply voltage,dr ain current, input power, and output power shall note xceed PD. 3. When operatinga t this condition with a basepla te temperature of 85C, the median timet o failure (MTTF)is significantly reduced. 4. These ratings apply to each individualFE T. 5. Junction operating temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. DC Specifications/Physical Properties Symbol Parameters and Test Conditions Units Value I DrainSupply Current (V = 5 V, V set f or I Typical) mA 650 d d g d V Gate Supply Operating Voltage (I = 650 (mA )) V - . g d(Q) 6 R Thermal Resistance ( Channel-to-Base Plate) C/W 20 qjc T Channel Temperature C 50.6 ch Note: 6. AssumeSnP b soldering to an evaluation RF boarda t80C base plate temperatures. Worstcase forthe channel temperatureis under the quiescent operation. At saturated output power,DC power consumption rises to 4.26 Wwith . 4 WRF power delivered toload . Power dissipationis 3. W and the temperature rise in the channel is 68.4C.I n this condition,the base plate temperature must be remained below 86.6C to maintainmaximum oper ating channel temperature below55C. 1,2,3,4 RF Specifications T = 25C, V = 5 V, Id = 650 mA, Z = 50 A d (Q) o Symbol Parameters and Test Conditions Units Minimum Typical Maximum Freq. OperationalF requency GHz 6 8 3,4 Gain Small-Signal GainS2 dB 7.5 ( Freq= 8 GHz) 8 5.5 ( Freq =7 GH z) 3 P Output Power at dB dBm 28( Freq= 8 GHz) 28.5 -dB 2 GainC ompression 27( Freq = 7 GHz) 3 P Output Powera t 3 dBG ain Compression dBm 29.5 -3dB OIP Third Order Intercept Point dBm 38 3 f= 00 MHz Pin = -20dBm 2 RLin Input Return Loss dB 3 2 RLout Output Return Loss dB 9 Isolation Reverse Isolation dB 45 Notes: . Small/large-signal data measured in packagedf orm on a 2.4 mm connecter based evaluation board at TA = 25C. 2. This finalpack age part performance is verified by a functional test correlated to actual performance at one or more frequencies. 3. Specifications areder ived from measurements in a 50 test environment. Aspects ofthe amplifier performance may be improved overa narrowerbandwidth b y application of additional conjugate, linearity, or powerma tching. 4. Preassembly into package performance verified 00% on-waferpublished specificationsa t frequencies =7, 2, and 7 GHz. 2