AMMP-6425 18-28 GHz 1W Power Amplifier in SMT Package Data Sheet Description Features The AMMP-6425 MMIC is a broadband 1W power 5x5 mm Surface Mount Package amplifier in a surface mount package designed for use Wide Frequency Range 18-28GHz in transmitters that operate in various frequency bands One watt output power between 18GHz and 28GHz. At 25GHz, it provides 31dBm of output power (P-1dB) and 25dB of small-signal gain 50 match on input and output from a small easy-to-use device. The device has input Specifications (Vd=5V, Idq=650mA) and output matching circuitry for use in 50 environ - ments. The AMMP-6425 also integrates a temperature Frequency range 18 to 28 GHz compensated RF power detection circuit that enables Small signal Gain of 22dB power detection of 0.25V/W. DC bias is simple and the Output power P-1 of 28dBm (Typ.) device operates on widely available 5V for current supply (negative voltage only needed for Vg). It is fabricated in Input/Output return-loss of -12dB a PHEMT process for exceptional power and gain perfor- Applications mance. Microwave Radio systems Package Diagram Satellite VSAT, DBS Up/Down Link Vg Vd DET O LMDS & Pt-Pt mmW Long Haul 1 2 3 Broadband Wireless Access (including 802.16 and 802.20 WiMax) WLL and MMDS loops RF IN 8 4 RF OUT Commercial grade military Functional Block Diagram 7 6 5 Pin Function 1 2 3 1 Vg 2 Vd Vg Vd DET R 3 DET O 4 RF out Note: 5 DET R 8 4 1. This MMIC uses depletion mode pHEMT devices. Negative supply is 6 Vd 7 Vg used for DC gate biasing. 8 RF in PACKAGE 7 6 5 BASE GND Attention: Observe Precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A): 60V ESD Human Body Model (Class 0): 200V Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. Note: MSL Rating = Level 2A Electrical Specifications 1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25C. 2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6425 published specifications. 3. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies. 4. Specifications are derived from measurements in a 50 test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (opt) matching. 5. The Gain and P1dB tested at 18, 23 and 28 GHz guaranteed with measurement accuracy +/-1.5dB for Gain and P1dB, except Gain at 18 GHz with measurement accuracy +/-1.8dB. Table 1. RF Electrical Characteristics TA=25C, Vd=5.0V, Idq=650mA, Vg=-1.1V, Zo=50 18GHz 23GHz 28GHz Parameter Min Typ Max Min Typ Max Min Typ Max Unit Comment Operational Frequency 18 28 18 28 18 28 GHz Small Signal Gain, Gain 21 23 21 23 20 22 dB Output Power at 1dBGain Compression, 26 28 27 28 27 28 dBm P1dB Output Third Order Intercept Point, 35 35 35 dBm OIP3 Reverse Isolation, Isolation 43 43 43 dB Input Return Loss, RLin 10 10 10 dB Output Return Loss, RLout 10 10 10 dB Table 2. Recommended Operating Range 1. Ambient operational temperature TA = 25C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (Tchannel (Tch) = 34C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25C calculated from measured data. Description Min. Typical Max. Unit Comments Drain Supply Current, Idq 650 mA Vd = 5V, Vg set for typical Idq Typical Gate Supply Voltage, Vg -1.1 V Idq = 650mA 2