AG303-63 InGaP HBT Gain Block Product Features Product Description Functional Diagram The AG303-63 is a general-purpose buffer amplifier that DC 6000 MHz GND 1 6 RF OUT offers high dynamic range in a low-cost surface-mount 20.5 dB Gain 900 MHz package. At 900 MHz, the AG303-63 typically provides +14 dBm P1dB 900 MHz 20.5 dB gain, +26 dBm OIP3, and +14 dBm P1dB. The GND 2 5 GND device combines dependable performance with consistent +26 dBm OIP3 900 MHz quality to maintain MTTF values exceeding 1000 years at Single Voltage Supply RF IN 3 4 GND mounting temperatures of +85 C and is housed in a lead Internally matched to 50 free/green/RoHS-compliant SOT-363 industry standard SMT package. Function Pin No. Robust 1000V ESD, Class 1C Input 3 Lead-free/green/RoHS-compliant The AG303-63 consists of a Darlington-pair amplifier Output/Bias 6 SOT-363 package using the high reliability InGaP/GaAs HBT process Ground 1, 2, 4, 5 technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. Applications The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies Mobile Infrastructure such as GPRS, GSM, CDMA, and W-CDMA. In addition, CATV / FTTX the AG303-63 will work for other various applications WLAN / ISM within the DC to 6 GHz frequency range such as CATV and WiMAX. RFID WiMAX / WiBro (1) (1) Specifications Typical Performance Parameter Units Min Typ Max Parameter Units Typical Operational Bandwidth MHz DC 6000 Frequency MHz 500 900 1900 2140 o Operational Temperature C -40 25 +85 S21 dB 21.1 20.5 18.3 17.7 Test Frequency MHz 900 S11 dB -20 -21 -20 -20 Gain dB 20.5 S22 dB -25 -24 -19 -18 Input Return Loss dB 21 Output P1dB dBm +14.0 +14.0 +12.6 +12.2 Output Return Loss dB 24 Output IP3 dBm +26.1 +25.8 +25.3 +24.9 Output P1dB dBm +14 Noise Figure dB 3.1 3.2 3.4 3.4 (2) Output IP3 dBm +25.8 Output IP2 dBm +34 Noise Figure dB 3.2 Test Frequency MHz 1900 Gain dB 17.3 18.3 19.3 Output P1dB dBm +12.6 (2) Output IP3 dBm +25.3 Device Voltage V 4.23 Device Current mA 35 1. Test conditions:. T = 25 C, Supply Voltage = +5 V, R = 22.1 , 50 System. bias 2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Ordering Information Storage Temperature -55 to +125 C DC Voltage +4.5 V Part No. Description RF Input Power (continuous) +10 dBm InGaP HBT Gain Block AG303-63G Thermal Resistance, Rth (lead-free/green/RoHS-compliant SOT-363 Package) 350 C/W 6 For 10 hours MTTF AG303-63PCB 700 2400 MHz Fully Assembled Eval. Board Junction Temperature +177 C Standard tape / reel size = 3000 pieces on a 7 reel Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales tqs.com Web site: www.TriQuint.com Page 1 of 5 August 2009 AG303-63 InGaP HBT Gain Block Typical Device RF Performance Supply Bias = +5 V, R = 22.1 , I = 35 mA bias cc Frequency MHz 100 500 900 1900 2140 2400 3500 5800 S21 dB 21.4 21.1 20.5 18.3 17.7 17.1 15.1 11.4 S11 dB -23 -20 -21 -20 -20 -20 -21 -20 S22 dB -20 -25 -24 -19 -18 17 -16 -11 Output P1dB dBm +14.0 +14.0 +14.0 +12.6 +12.2 +12.1 +9.8 Output IP3 dBm +26.3 +26.1 +25.8 +25.3 +24.9 +24.2 Noise Figure DB 3.1 3.1 3.2 3.4 3.4 3.5 1. Test conditions: T = 25 C, Supply Voltage = +5 V, Device Voltage = 4.23 V, Rbias = 22.1 , Icc = 35 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of -2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. Gain vs. Frequency Return Loss I-V Curve 22 0 60 50 20 -10 Optimal operating point 40 18 -20 30 16 20 -30 14 10 S11 S22 -40 C +25 C +85 C 0 -40 12 3.0 3.5 4.0 4.5 0 1 2 3 4 5 6 0 1 2 3 4 Device Voltage (V) Frequency (GHz) Frequency (GHz) Output IP3 vs. Frequency Output IP2 vs. Frequency Noise Figure vs. Frequency 30 40 5 4 25 35 3 20 30 2 15 25 1 -40 C +25 C +85 C -40C +25C +85C -40 C +25 C +85 C 0 10 20 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 0 200 400 600 800 1000 Frequency (GHz) Frequency (MHz) Frequency (GHz) Output Power / Gain vs. Input Power Output Power / Gain vs. Input Power P1dB vs. Frequency frequency = 900 MHz frequency = 2000 MHz 20 20 20 18 16 18 16 16 12 15 Gain Gain 16 12 14 8 10 14 8 12 4 5 12 4 10 0 -40 C +25 C +85 C Output Power Output Power 0 10 0 8 -4 0 0.5 1 1.5 2 2.5 3 3.5 4 -20 -16 -12 -8 -4 0 4 -20 -16 -12 -8 -4 0 4 Frequency (GHz) Input Power (dBm) Input Power (dBm) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone +1-503-615-9000 FAX: +1-503-615-8900 e-mail: info-sales tqs.com Web site: www.TriQuint.com Page 2 of 5 August 2009 OIP3 (dBm) P1dB (dBm) Gain (dB) OIP2 (dBm) Gain (dB) S11, S22 (dB) Output Power (dBm) NF (dB) Gain (dB) Device Current (mA) Output Power (dBm)