HMPS-2822-TR1 Broadcom

HMPS-282x Series MiniPak Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These ultra-miniature products represent the blending of Surface mount MiniPak package Avago Technologies proven semiconductor and the latest Better thermal conductivity for higher power in leadless packaging. This series of Schottky diodes is dissipation the most consistent and best all-round device available, Single and dual versions and finds applications in mixing, detecting, switching, sampling, clamping and wave shaping at frequencies up Matched diodes for consistent performance to 6 GHz. The MiniPak package offers reduced parasit- Low turn-on voltage (as low as 0.34 V at 1 mA) ics when compared to conventional leaded diodes, and Low FIT (Failure in Time) rate* lower thermal resistance. Six-sigma quality level The HMPS-282x family of diodes offers the best all-around For more information, see the Surface Mount choice for most applications, featuring low series resis- Schottky Reliability Data Sheet. tance, low forward voltage at all current levels and good RF characteristics. Note that Avagos manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match. Minipak 1412 is a ceramic based package, while Minipak QFN is a leadframe based package. Pin Connections and Package Marking Package Lead Code Identification (Top View) Single Anti-parallel Parallel 3 4 3 4 3 4 3 4 AA 2 1 2 1 2 1 2 1 0 2 5 (MiniPak1412) (MiniPak1412) (MiniPak1412) Productcode Datecode Anti-parallel Parallel Notes: 1. Package marking provides orientation and identification. 3 4 3 4 2. See Electrical Specifications for appropriate package marking. 2 1 2 1 2 5 (MiniPakQFN) (MiniPakQFN) 1 HMPS-282x Series Absolute Maximum Ratings , T = 5 c c MiniPak 1412/ Symbol Parameter Units MiniPak QFN I Forward Current (1 s pulse) A 1 f P Peak Inverse Voltage V 15 IV T Junction Temperature C 150 j T Storage Temperature C -65 to +150 stg 2 Thermal Resistance C/W 150 jc Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. T = +25C, where T is defined to be the temperature at the package pins where contact is made to the circuit board. C C MiniPak 1412 4 Electrical Specifications, T = + 5c, Single Diode c Minimum Maximum Maximum Maximum Typical Part Package Breakdown Forward Forward Reverse Maximum Dynamic Number Marking Lead Voltage Voltage Voltage Leakage Capacitance Resistance 4 HMPS- Code Code Configuration V (V) V (mV) V (V) I (mA) I (nA) V (V) C (pF) R () BR F F F R R T D 2820 L 0 Single 15 340 0.5 10 100 1 1.0 12 Test Conditions I = 100 I = 1 V = 0 V I = 5 mA R F F F 1 A mA f = 1 2 MHz Notes: 1. V for diodes in pairs is 15 mV maximum at 1 mA. F 2. C for diodes in pairs is 0.2 pF maximum. TO 3. Effective carrier lifetime () for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA. 4. R = R + 5.2 at 25C and I = 5 mA. D S f MiniPak QFN 4 Electrical Specifications, T = + 5c, Single Diode c Minimum Maximum Maximum Maximum Typical Part Package Breakdown Forward Forward Reverse Maximum Dynamic Number Marking Lead Voltage Voltage Voltage Leakage Capacitance Resistance 4 HMPS- Code Code Configuration V (V) V (mV) V (V) I (mA) I (nA) V (V) C (pF) R () BR F F F R R T D 2822 3 2 Anti-parallel 15 340 0.5 10 100 1 1.0 12 2825 2 5 Parallel Test Conditions I = 100 I = 1 V = 0 V I = 5 mA R F F F 1 A mA f = 1 2 MHz Notes: 1. V for diodes in pairs is 15 mV maximum at 1 mA. F 2. C for diodes in pairs is 0.2 pF maximum. TO 3. Effective carrier lifetime () for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA. 4. R = R + 5.2 at 25C and I = 5 mA. D S f ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.