HSCH-5310 Broadcom

HSCH-53xx Series Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz) Data Sheet Description Features These beam lead diodes are constructed using a metal- Platinum tri-metal system semiconductor Schottky barrier junction. Advanced High temperature stability epitaxial techniques and precise process control insure Silicon nitride passivation uniformity and repeatability of this planar passivated Stable, reliable performance microwave semiconductor. A nitride passivation layer Low noise figure provides immunity from contaminants which could Guaranteed 7.5 dB at 26 GHz otherwise lead to I drift. R High uniformity Tightly controlled process insures uniform RF The Avago beam lead process allows for large beam characteristics anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance. Rugged construction 4 grams minimum lead pull Applications Low capacitance The beam lead diode is ideally suited for use in stripline 0.10 pF max. at 0 V or microstrip circuits. Its small physical size and Polyimide scratch protection uniform dimensions give it low parasitics and repeatable RF characteristics through K-band. The basic medium barrier devices in this family are DC Outline 07 tested HSCH-5310 and -5312. Equivalent low barrier CATHODE devices are HSCH-5330 and -5332. Batch matched GOLD LEADS versions are available as HSCH-5331. 130 (5) 100 (4) 135 (5) The HSCH-5340 is selected for applications requiring 90 (3) guaranteed RF-tested performance up to 26 GHz. The 135 (5) HSCH-5314 is rated at 7.2 dB maximum noise figure at 90 (3) 16 GHz. 225 (9) 310 (12) 225 (9) 200 (8) 250 (10) 170 (7) Assembly Techniques Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information, see Application Note 979, The Handling 8 Min. (.3) 30 MIN (1) and Bonding of Beam Lead Devices Made Easy, or Application Note 993, Beam Lead Device Bonding to Soft Substances. SILICON GLASS 60 (2) 710 (28) 40 (1) 670 (26) DIMENSIONS IN m (1/1000 inch)Maximum Ratings Pulse Power Incident at T = 25C ........................................................ 1 W A Pulse Width = 1 ms, Du = 0.001 CW Power Dissipation at T = 25C ............................................... 150 mW A Measured in an infinite heat sink derated linearly to zero at maximum rated temperature T Operating Temperature Range ............................. -65C to +175 C OPR T Storage Temperature Range ................................... -65C to +200C STG Minimum Lead Strength ...................................... 4 grams pull on any lead Diode Mounting Temperature .............................. +350C for 10 sec. max. These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode. Table IA. Electrical Specifications for RF Tested Diodes at T = 25C A I Min. Max. Max. F Max. Impedance Break- Dynamic Total Max. Max. Part Noise Z ( ) down Resis- Capaci- Forward Leakage IF Number Figure Max. Voltage tance tance Voltage Current HSCH- Barrier NF (dB) Min. Max. SWR V (V) R ()C (pF) V (mV) I (nA) BR D T F R 5314 Medium 7.2 at 200 400 1.5:1 4 16 0.15 500 100 16 GHz 5340 Low 7.5 at 150 350 20 0.10 375 400 26 GHz 10 AI = 5 mA V = 0 V I = 1 mA V = 1 V Test DC Load Resistance - 0 I R F R F R Conditions LO Power = 1 mW f = 1 MHz I = 30 MHz, 1.5 dB NF F *Minimum batch size 20 units. Note: 1. C = C + 0.02 pF (fringing cap). T J 2