HSMS-280P-TR1G Broadcom

HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both Surface Mount Packages analog and digital applications. This series offers a wide High Breakdown Voltage range of specifica tions and package con figura tions to Low FIT (Failure in Time) Rate* give the designer wide flexi bility. The HSMS-280x series of diodes is optimized for high voltage applications. Six-sigma Quality Level Single, Dual and Quad Versions Note that Avagos manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites Tape and Reel Options Available on the wafer, assuring the highest degree of match. Lead-free * For more information see the Surface Mount Schottky Reliability Data Sheet. Package Lead Code Identification, SOT-323 (Top View) P ackage Lead Code Identification, SOT-363 (Top View) HIGH ISOLATION UNCONNECTED SINGLE SERIES UNCONNECTED PAIR TRIO 65 4 65 4 B C 12 3 12 3 K L COMMON COMMON ANODE CATHODE COMMON COMMON CATHODE QUAD ANODE QUAD 65 4 65 4 E F 12 3 12 3 M N BRIDGE RING QUAD QUAD 65 4 65 4 Package Lead Code Identification, SOT-23/SOT-143 (Top View) 12 3 12 3 COMMON COMMON P R SINGLE SERIES ANODE CATHODE 3 3 3 3 12 12 12 12 4 0 2 3 UNCONNECTED BRIDGE PAIR QUAD 34 34 12 12 5 8GUx Pin Connections and Package Marking, SOT-363 Notes: 1 6 1. Package marking provides orientation and identification. 2. See Electrical Specifications for appropriate package marking. 2 5 ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge. 3 4 1 Absolute Maximum Ratings T = 25C C Symbol Parameter Unit SOT-23/SOT-143 SOT-323/SOT-363 I Forward Current (1 s Pulse) Amp 1 1 f P Peak Inverse Voltage V Same as V Same as V IV BR BR T Junction Temperature C 150 150 j T Storage Temperature C -65 to 150 -65 to 150 stg 2 Thermal Resistance C/W 500 150 jc Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. T = +25C, where T is defined to be the temperature at the package pins where contact is made to the circuit board. C C 3 Electrical Specifications T = 25C, Single Diode A Minimum Maximum Maximum Maximum Typical Part Package Breakdown Forward Forward Reverse Maximum Dynamic Number Marking Lead Voltage Voltage Voltage Leakage Capacitance Resistance 4 5 HSMS Code Code Configuration V (V) V (mV) V (V) I (mA) I (nA) V (V) C (pF) R () BR F F F R R T D 2800 A0 0 Single 2802 A2 2 Series 2803 A3 3 Common Anode 2804 A4 4 Common Cathode 2805 A5 5 Unconnected Pair 4 2808 A8 8 Bridge Quad 280B A0 B Single 280C A2 C Series 70 410 1.0 15 200 50 2.0 35 280E A3 E Common Anode 280F A4 F Common Cathode High Isolation 280K AK K Unconnected Pair 280L AL L Unconnected Trio 280M H M Common Cathode Quad 280N N N Common Anode Quad 280P AP P Bridge Quad 280R O R Ring Quad Test Conditions I = 10 mA I = 1 mA V = 0 V I = 5 mA R F F F f = 1 MHz Notes: 1. DV for diodes in pairs and quads in 15 mV maximum at 1 mA. F 2. DC for diodes in pairs and quads is 0.2 pF maximum. TO 3. Effective Carrier Lifetime (t) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA. 4. See section titled Quad Capacitance. 5. R = R + 5.2 at 25C and I = 5 mA. D S f 2