HSMS-282x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features Low Turn On Voltage (As Low as 0.34 V at 1 mA) These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide Low FIT (Failure in Time) Rate* range of specifica tions and package configur ations to give Sixsig ma Quality Level the designer wide flexibility. Typical applications of these Single, Dual and Quad Versions Schottky diodes are mixing, detecting, switching, sam pling, clamping, and wave shaping. The HSMS282x series Unique Configurations in Surface Mount SOT 363 of diodes is the best allaround choice for most applica Package tions, featuring low series resistance, low forward voltage increase flexibility at all current levels and good RF characteristics. save board space Note that Avagos manufacturing techniques assure that reduce cost dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match. HSMS282K Grounded Center Leads Provide up to 10 dB Higher Isolation Package Lead Code Identification, Matched Diodes for Consistent Performance SOT-23/SOT-143 (Top View) Better Thermal Conductivity for Higher Power Dissipation COMMON COMMON Leadfree Option Available SINGLE SERIES ANODE CATHODE 3 3 3 3 For more information see the Surface Mount Schottky Reliability Data Sheet. 1 2 1 2 1 2 1 2 0 2 3 4 Package Lead Code Identification, SOT-363 UNCONNECTED RING BRIDGE CROSS-OVER PAIR QUAD QUAD QUAD 3 4 3 4 3 4 3 4 (Top View) HIGH ISOLATION UNCONNECTED UNCONNECTED PAIR TRIO 1 2 1 2 1 2 1 2 5 7 8 9 6 5 4 6 5 4 Package Lead Code Identification, SOT-323 1 2 3 1 2 3 K L (Top View) COMMON COMMON CATHODE QUAD ANODE QUAD 6 5 4 6 5 4 SERIES SINGLE 1 2 3 1 2 3 M N B C BRIDGE RING COMMON COMMON QUAD QUAD ANODE CATHODE 6 5 4 6 5 4 1 2 3 1 2 3 P R E FGUx Pin Connections and Package Marking 1 6 2 5 3 4 Notes: 1. Package marking provides orientation and identification. 2. See Electrical Specifications for appropriate package marking. 1 Absolute Maximum Ratings T = 25C C Symbol Parameter Unit SOT-23/SOT-143 SOT-323/SOT-363 I Forward Current (1 s Pulse) Amp 1 1 f P Peak Inverse Voltage V 15 15 IV T Junction Temperature C 150 150 j T Storage Temperature C 65 to 150 65 to 150 stg 2 Thermal Resistance C/W 500 150 jc Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. T = +25C, where T is defined to be the temperature at the package pins where contact is made to the circuit board. C C 3 Electrical Specifications T = 25C, Single Diode C Maximum Maximum Minimum Maximum Forward Reverse Typical Part Package Breakdown Forward Voltage Leakage Maximum Dynamic Number Marking Lead Voltage Voltage V (V) I (nA) Capacitance Resistance F R 4 5 HSMS Code Code Configuration V (V) V (mV) I (mA) V (V) C (pF) R () BR F F R T D 2820 C0 0 Single 15 340 0.5 10 100 1 1.0 12 2822 C2 2 Series 2823 C3 3 Common Anode 2824 C4 4 Common Cathode 2825 C5 5 Unconnected Pair 4 2827 C7 7 Ring Quad 4 2828 C8 8 Bridge Quad 2829 C9 9 Crossover Quad 282B C0 B Single 282C C2 C Series 282E C3 E Common Anode 282F C4 F Common Cathode 282K CK K High Isolation Unconnected Pair 282L CL L Unconnected Trio 282M HH M Common Cathode Quad 282N NN N Common Anode Quad 282P CP P Bridge Quad 282R OO R Ring Quad 1 2 Test Conditions I = 100 mA I = 1 mA V = 0V I = 5 mA R F R F f = 1 MHz Notes: 1. V for diodes in pairs and quads in 15 mV maximum at 1 mA. F 2. C for diodes in pairs and quads is 0.2 pF maximum. TO 3. Effective Carrier Lifetime ( ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA. 4. See section titled Quad Capacitance. 5. R = R + 5.2 at 25C and I = 5 mA. D S f 2