X-On Electronics has gained recognition as a prominent supplier of HSMS-8101-TR1G RF Mixer across the USA, India, Europe, Australia, and various other global locations. HSMS-8101-TR1G RF Mixer are a product manufactured by Broadcom. We provide cost-effective solutions for RF Mixer, ensuring timely deliveries around the world.

HSMS-8101-TR1G Broadcom

HSMS-8101-TR1G electronic component of Broadcom
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See Product Specifications
Part No.HSMS-8101-TR1G
Manufacturer: Broadcom
Category: RF Mixer
Description: RF Mixer 4 VBR 0.26 pF
Datasheet: HSMS-8101-TR1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 6000
Multiples : 6000
6000 : USD 0.8407
12000 : USD 0.8188
18000 : USD 0.7861
30000 : USD 0.7766
60000 : USD 0.7574
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.4622
10 : USD 1.1781
100 : USD 0.9494
500 : USD 0.8385
1000 : USD 0.7051
3000 : USD 0.7051
9000 : USD 0.6942
24000 : USD 0.6725
45000 : USD 0.6508
N/A

Obsolete
   
Manufacturer
Product Category
Frequency Range
Conversion Loss - Max
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Package / Case
Packaging
RF Frequency
Package Case
Brand
Conversion Loss Max
Maximum Power Dissipation
Factory Pack Quantity :
Rohs Mouser
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the HSMS-8101-TR1G from our RF Mixer category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HSMS-8101-TR1G and other electronic components in the RF Mixer category and beyond.

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HSMS-8101, 8202, 8207, 8209 Surface Mount Microwave Schottky Mixer Diodes Data Sheet Description/Applications Features Optimized for use at 1014 GHz These low cost microwave Schottky diodes are specicfi ally designed for use at X/Ku bands and are ideal for DBS and Low Capacitance VSAT downconverter applications. They are available in Low Conversion Loss SOT23 and SOT143 standard package configurations. Low RD Note that Avago s manufacturing techniques assure that Low Cost Surface Mount Plastic Package dice found in pairs and quads are taken from adjacent Leadfree sites on the wafer, assuring the highest degree of match. Plastic SOT-23 Package Package Lead Code Identification (Top View) SINGLE SERIES 3 3 1 2 1 2 1 2 Plastic SOT-143 Package RING CROSS-OVER QUAD QUAD 3 4 3 4 1 2 1 2 7 9 1 Absolute Maximum Ratings , T = +25C A Symbol Parameter Unit Min. Max. Attention: Observe precautions for 2 handling electrostatic sensitive devices. P Total Device Dissipation mW 75 T ESD Machine Model (Class A) P Peak Inverse Voltage V 4 IV ESD Human Body Model (Class 0) Refer to Avago Application Note A004R: T Junction Temperature C +150 J Electrostatic Discharge Damage and Control. T , T Storage and Operating C 65 +150 STG op Temperature Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. Measured in an infinite heat sink at T = 25C. Derate linearly to CASE zero at 150C per diode.DC Electrical Specicfi ations, T = 25C A HSMS-8101 HSMS-8202 HSMS-8207 HSMS-8209 Symbol Parameters and Test Conditions Units Min. Max. Min. Max. Min. Max. Min. Max. V Breakdown Voltage V 4 4 4 4 BR I = 10 A R C Total Capacitance pF 0.26 0.26 0.26 0.26 T V = 0 V, f = 1 MHz R DC Capacitance Difference pF 0.04 0.04 0.04 T V = 0 V, f = 1 MHz R R Dynamic Resistance 14 14 14 14 D I = 5 mA F DR Dynamic Resistance Difference 2 2 2 D I = 5 mA F V Forward Voltage mV 250 350 250 350 250 350 250 350 F I = 1 mA F DV Forward Voltage Difference mV 20 20 20 F I = 1 mA F Lead Code 1 2 7 9 Package Marking Code R1x 2Rx R7x R9x where x is date code RF Electrical Parameters, T = 25C Linear Equivalent Circuit A Symbol Parameter Units Typical 0.08pF L Conversion Loss at 12 GHz dB 6.3 c Z IF Impedance 150 IF SWR SWR at 12 GHz 1.2 1.0nH 1.3nH 6 0.17pF Note: DC Load Resistance = 0 LO Power = 1 mW. R j SPICE Parameters Self Bias 1 mA 2.5 mA I = 4.6 E8 E = 0.69 TT = 0 S G R = 6 C = 0.18 E12 R 256 142 S JO j N = 1.09 P (V ) = 0.5 B J B = 7.3 M = 0.5 V I = 10E5 FC = 0.5 BV 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
AV4
AV9
Avago
Avago Technologies US Inc.
AVAGO(Broadcom)
Broadcom Avago
BROADCOM (AVAGO)
Broadcom / Avago
BROADCOM CORPORATION
Broadcom Limited
Broadcom/AVAGO
PLX Technology Avago
PLX Technology / Avago
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