HSMS-8101, 8202, 8207, 8209 Surface Mount Microwave Schottky Mixer Diodes Data Sheet Description/Applications Features Optimized for use at 1014 GHz These low cost microwave Schottky diodes are specicfi ally designed for use at X/Ku bands and are ideal for DBS and Low Capacitance VSAT downconverter applications. They are available in Low Conversion Loss SOT23 and SOT143 standard package configurations. Low RD Note that Avago s manufacturing techniques assure that Low Cost Surface Mount Plastic Package dice found in pairs and quads are taken from adjacent Leadfree sites on the wafer, assuring the highest degree of match. Plastic SOT-23 Package Package Lead Code Identification (Top View) SINGLE SERIES 3 3 1 2 1 2 1 2 Plastic SOT-143 Package RING CROSS-OVER QUAD QUAD 3 4 3 4 1 2 1 2 7 9 1 Absolute Maximum Ratings , T = +25C A Symbol Parameter Unit Min. Max. Attention: Observe precautions for 2 handling electrostatic sensitive devices. P Total Device Dissipation mW 75 T ESD Machine Model (Class A) P Peak Inverse Voltage V 4 IV ESD Human Body Model (Class 0) Refer to Avago Application Note A004R: T Junction Temperature C +150 J Electrostatic Discharge Damage and Control. T , T Storage and Operating C 65 +150 STG op Temperature Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. Measured in an infinite heat sink at T = 25C. Derate linearly to CASE zero at 150C per diode.DC Electrical Specicfi ations, T = 25C A HSMS-8101 HSMS-8202 HSMS-8207 HSMS-8209 Symbol Parameters and Test Conditions Units Min. Max. Min. Max. Min. Max. Min. Max. V Breakdown Voltage V 4 4 4 4 BR I = 10 A R C Total Capacitance pF 0.26 0.26 0.26 0.26 T V = 0 V, f = 1 MHz R DC Capacitance Difference pF 0.04 0.04 0.04 T V = 0 V, f = 1 MHz R R Dynamic Resistance 14 14 14 14 D I = 5 mA F DR Dynamic Resistance Difference 2 2 2 D I = 5 mA F V Forward Voltage mV 250 350 250 350 250 350 250 350 F I = 1 mA F DV Forward Voltage Difference mV 20 20 20 F I = 1 mA F Lead Code 1 2 7 9 Package Marking Code R1x 2Rx R7x R9x where x is date code RF Electrical Parameters, T = 25C Linear Equivalent Circuit A Symbol Parameter Units Typical 0.08pF L Conversion Loss at 12 GHz dB 6.3 c Z IF Impedance 150 IF SWR SWR at 12 GHz 1.2 1.0nH 1.3nH 6 0.17pF Note: DC Load Resistance = 0 LO Power = 1 mW. R j SPICE Parameters Self Bias 1 mA 2.5 mA I = 4.6 E8 E = 0.69 TT = 0 S G R = 6 C = 0.18 E12 R 256 142 S JO j N = 1.09 P (V ) = 0.5 B J B = 7.3 M = 0.5 V I = 10E5 FC = 0.5 BV 2