Product Information

HSMS-8209-BLKG

HSMS-8209-BLKG electronic component of Broadcom

Datasheet
RF Mixer 4 VBR 0.26 pF

Manufacturer: Broadcom
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.7665 ea
Line Total: USD 3.77

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

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HSMS-8209-BLKG
Broadcom

1 : USD 3.7665
5 : USD 3.276
7 : USD 2.3751
18 : USD 2.2464

     
Manufacturer
Product Category
Mounting
Kind Of Package
Semiconductor Structure
Case
Type Of Diode
Max Forward Voltage
Max Off-State Voltage
Load Current
Leakage Current
Broadcom
Brand Category
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HSMS-8101, 8202, 8207, 8209 Surface Mount Microwave Schottky Mixer Diodes Data Sheet Description/Applications Features These low cost microwave Schottky diodes are specifi cally Optimized for use at 10-14 GHz designed for use at X/Ku-bands and are ideal for DBS and Low Capacitance VSAT downconverter applications. They are available in Low Conversion Loss SOT-23 and SOT-143 standard package confi gurations. Low RD Note that Avago s manufacturing techniques assure that Low Cost Surface Mount Plastic Package dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match. Lead-free Option Available Plastic SOT-23 Package Package Lead Code Identifi cation (Top View) SINGLE SERIES 3 3 Plastic SOT-143 Package 12 12 1 2 RING CROSS-OVER QUAD QUAD 34 34 1 Absolute Maximum Ratings , T = +25 C A Symbol Parameter Unit Min. Max. 2 12 12 P Total Device Dissipation mW 75 T 7 9 P Peak Inverse Voltage V 4 IV T Junction Temperature C +150 J Attention: Observe precautions for T , T Storage and Operating C -65 +150 STG op handling electrostatic sensitive devices. Temperature ESD Machine Model (Class A) Notes: ESD Human Body Model (Class 0) 1. Operation in excess of any one of these conditions may result in Refer to Avago Application Note A004R: permanent damage to the device. 2. Measured in an infi nite heat sink at T = 25 C. Derate linearly to Electrostatic Discharge, Damage and Control. CASE zero at 150 C per diode.DC Electrical Specifi cations, T = 25 C A HSMS-8101 HSMS-8202 HSMS-8207 HSMS-8209 Symbol Parameters and Test Conditions Units Min. Max. Min. Max. Min. Max. Min. Max. V Breakdown Voltage V 4 4 4 4 BR I = 10 A R C Total Capacitance pF 0.26 0.26 0.26 0.26 T V = 0 V, f = 1 MHz R DC Capacitance Diff erence pF 0.04 0.04 0.04 T V = 0 V, f = 1 MHz R R Dynamic Resistance 14 14 14 14 D I = 5 mA F DR Dynamic Resistance Diff erence 2 2 2 D I = 5 mA F V Forward Voltage mV 250 350 250 350 250 350 250 350 F I = 1 mA F DV Forward Voltage Diff erence mV 20 20 20 F I = 1 mA F Lead Code 1279 Package Marking Code R1x 2Rx R7x R9x where x is date code RF Electrical Parameters, T = 25 C Linear Equivalent Circuit A Symbol Parameter Units Typical 0.08 pF L Conversion Loss at 12 GHz dB 6.3 c Z IF Impedance 150 IF SWR SWR at 12 GHz 1.2 1.0 nH 1.3 nH 6 0.17 pF Note: DC Load Resistance = 0 LO Power = 1 mW. SPICE Parameters R j I = 4.6 E-8 E = 0.69 TT = 0 S G R = 6 C = 0.18 E-12 S JO Self Bias N = 1.09 P (V ) = 0.5 B J 1 mA 2.5 mA B = 7.3 M = 0.5 V I = 10E-5 FC = 0.5 R 256 142 j BV 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
 AVAGO TECHNOLOGIES
AV4
AV9
Avago
AVAGO TECHNOLOGIES
Avago Technologies US Inc.
AVAGO(Broadcom)
Broadcom Avago
BROADCOM (AVAGO)
Broadcom / Avago
BROADCOM CORPORATION
Broadcom Limited
PLX Technology Avago
PLX Technology / Avago

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