MGA-13116
High Gain, High Linearity, Very Low Noise Amplifier
Data Sheet
Description Features
Avago Technologies MGA-13116 is a two stage, easy-to- Optimum frequency of operation 400 MHz 1.5 GHz
use GaAs MMIC Low Noise Amplifier (LNA). The LNA has
Very low noise figure
low noise with good input return loss and high linearity
High gain
achieved through the use of Avago Technologies propri-
High linearity performance
etary 0.25 m GaAs Enhancement-mode pHEMT process.
Minimum matching needed for input, output and the Excellent isolation
inter-stage between the two LNA. [1]
GaAs E-pHEMT Technology
3
It is designed for optimum use between 400 MHz to 1.5 Low cost small package size: 4.0 x 4.0 x 0.85 mm
GHz. For optimum performance at higher frequency from
Specifications
1.5 GHz to 2.5 GHz, the MGA-13216 is recommended. Both
MGA-13116 & MGA-13216 share the same package and
900 MHz; Q1: 5 V, 55 mA (typ) Q2: 5 V, 112 mA (typ)
pinout configuration.
0.51 dB Noise Figure
Pin Configuration and Package Marking
38 dB Gain
3
4.0 x 4.0 x 0.85 mm 16-lead QFN 52 dB RFoutQ1 to RFinQ2 Isolation
41.4 dBm Output IP3
23.3 dBm Output Power at 1dB gain compression
Pin 2 Vbias
Pin 3 RFinQ1
12 1
AVAGO
Pin 10 RFoutQ2
Applications
11 2 Pin 11 RFoutQ2
13116
GND
Pin 13 RFinQ2
10 3
YYWW Low noise amplifier for cellular infrastructure including
Pin 16 RFoutQ1
XXXX
9 4
GSM, CDMA, and W-CDMA.
All other pics NC
Not Connected
Other very low noise applications.
TOP VIEW BOTTOM VIEW
Simplified Schematic
Note:
Vdd2
Vdd1
Package marking provides orientation and identification
C10
13116 = Device Part Number
C9
R4
YYWW = Work Week and Year of Manufacture
R2
XXXX = Lot Number
C7
C5
R3
C8 C4
L3
Attention: Observe precautions for C6 R1
C3
handling electrostatic sensitive devices.
16 15 14 13
ESD Machine Model = 90 V
1 12
L2
ESD Human Body Model = 300 V
L1
2 11
Q1bias
RFIN
RFOUT
Refer to Avago Application Note A004R:
C1 C2
Q1 Q2
3 10
Electrostatic Discharge, Damage and Control.
4 9
5 6 7 8
Notes: Enhancement mode technology employs positive gate bias,
thereby eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
8 13
7 14
6 15
5 16 [1] [3]
MGA-13116 Absolute Maximum Rating TA = 25 C Thermal Resistance
Symbol Parameter Units Absolute Maximum (V =5.0V, I =55mA, V =5.0V,
dd1 dd1 dd2
I =112mA) = 41.9C/W
dd2 jc
Vdd1 Device Voltage V 5.5
Notes:
Vdd2 Device Voltage V 5.5
1. Operation of this device in excess of any of
these limits may cause permanent damage.
Idd1 Q1 Drain Current mA 90
2. Board temperature (T ) is 25 C. For T >100 C,
c c
(2)
P Power Dissipation W1.02
d
derate the device power at 23.9 mW per
C rise in board temperature adjacent to
P CW RF Input Power dBm 20
in,max
package bottom.
T Junction Temperature C 150
j,max
3. Thermal resistance measured using Infrared
Measurement Technique.
T Storage Temperature C -65 to 150
stg
[1]
Electrical Specifications
RF performance at Vdd1 = 5 V, V = 5 V, 900 MHz, T = 25 C, measured on the demo board.
dd2 A
Symbol Parameter and Test Condition Units Min. Typ. Max.
Idd1 Current at Q1 mA 42 55 69
Idd2 Current at Q2 mA 92 112 131
NF Noise Figure dB 0.51 0.85
GainGain dB36.53839.5
[2]
OIP3 Output Third Order Intercept Point dBm 37.5 41.4
OP1dB Output Power at 1 dB Gain Compression dBm 22 23.3
IRL Input Return Loss, 50 source dB -19
ORL dB -12
Output Return Loss, 50 load
|S12| Reverse Isolation dB 48
|ISOL | Isolation between Q1s Output pin & Q2s Input pin dB 52
1-2
Notes:
1. Measurements obtained using demo board described in Figure 7 with component list in Table 1. Input and Output trace loss is not de-embedded
from the measurement.
2. OIP3 test condition: f = 900 MHz, f = 901 MHz with input power of -29 dBm per tone.
tone1 tone2
3. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note for more details.
2