MGA-13216 High Gain, High Linearity, Very Low Noise Amplifier Data Sheet Description Features Avago Technologies MGA-13216 is a two stage, easy-to- Optimum frequency of operation 1.5 GHz 2.5 GHz use GaAs MMIC Low Noise Amplifier (LNA). The LNA has Very low noise figure low noise with good input return loss and high linearity High gain achieved through the use of Avago Technologies propri- High linearity performance etary 0.25 m GaAs Enhancement-mode pHEMT process. Minimum matching needed for input, output and the Excellent isolation inter-stage between the two LNA. 1 GaAs E-pHEMT Technology 3 It is designed for optimum use between 1.5 GHz to 2.5 Low cost small package size: 4.0 x 4.0 x 0.85 mm GHz. For optimum performance at lower frequency from Specifications 400 MHz to 1.5 GHz, the MGA-13116 is recommended. Both MGA-13216 & MGA-13116 share the same package 1.95 GHz Q1: 5 V, 53 mA (typ) Q2: 5 V, 122 mA (typ) and pinout configuration. 0.61 dB Noise Figure Pin Configuration and Package Marking 35.8 dB Gain 3 4.0 x 4.0 x 0.85 mm 16-lead QFN 46 dB RFoutQ1 to RFinQ2 Isolation 40.5 dBm Output IP3 23.6 dBm Output Power at 1dB gain compression Pin 2 Vbias Pin 3 RFinQ1 12 1 AVAGO Pin 10 RFoutQ2 Applications 11 2 Pin 11 RFoutQ2 13216 GND Pin 13 RFinQ2 10 3 YYWW Low noise amplifier for cellular infrastructure including Pin 16 RFoutQ1 XXXX 9 4 GSM, CDMA, and W-CDMA. All other pins NC Not Connected Other very low noise applications. TOP VIEW BOTTOM VIEW Simplified Schematic Note: Vdd2 Vdd1 Package marking provides orientation and identification C10 13216 = Device Part Number C9 R4 YYWW = Work Week and Year of Manufacture R2 XXXX = Lot Number C7 C5 R3 C8 C4 L3 C6 R1 Attention: Observe precautions for C3 handling electrostatic sensitive devices. 16 15 14 13 ESD Machine Model = 90 V 1 12 L2 ESD Human Body Model = 650 V L1 2 11 Q1bias RFIN RFOUT Refer to Avago Application Note A004R: C1 C2 Q1 Q2 3 10 Electrostatic Discharge, Damage and Control. 4 9 5 6 7 8 Notes: Enhancement mode technology employs positive gate bias, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. 8 13 7 14 6 15 5 16 1 3 MGA-13216 Absolute Maximum Rating TA = 25 C Thermal Resistance Symbol Parameter Units Absolute Maximum (V =5.0V, I =53mA, V =5.0V, dd1 dd1 dd2 I =122mA) = 40.3 C/W dd2 jc Vdd1 Device Voltage V 5.5 Notes: Vdd2 Device Voltage V 5.5 1. Operation of this device in excess of any of these limits may cause permanent damage. Idd1 Q1 Drain Current mA 90 2. Board temperature (T ) is 25 C. For T >100 C, c c (2) P Power Dissipation W 1.11 d derate the device power at 24.8 mW per C rise in board temperature adjacent to pack- P CW RF Input Power dBm 20 in,max age bottom. T Junction Temperature C 150 j,max 3. Thermal resistance measured using Infrared Measurement Technique. T Storage Temperature C -65 to 150 stg 1 Electrical Specifications RF performance at Vdd1 = 5 V, Vdd2 = 5 V, 1.95 GHz, T = 25 C, measured on the demo board for 1.95 GHz matching. A Symbol Parameter and Test Condition Units Min. Typ. Max. Idd1 Current at Q1 mA 39 53 67 Idd2 Current at Q2 mA 101 122 143 NF Noise Figure dB 0.61 0.9 GainGain dB34.335.837.3 2 OIP3 Output Third Order Intercept Point dBm 37 40.5 OP1dB Output Power at 1 dB Gain Compression dBm 22.3 23.6 IRL Input Return Loss, 50 source dB -18 ORL dB -10.7 Output Return Loss, 50 load S12 Reverse Isolation dB 55 ISOL Isolation between Q1s Output pin & Q2s Input pin dB 46 1-2 Notes: 1. Measurements obtained using demo board described in Figure 7 with component list in Table 1. Input and Output trace loss is not de-embedded from the measurement. 2. OIP3 test condition: f = 1.95 GHz, f = 1.951 GHz with input power of -27 dBm per tone. tone1 tone2 3. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note for more details. 2