MGA-16216 Dual LNA for Balanced Application 1440 2350 MHz Data Sheet Description Features Avago Technologies MGA-16216 is an ultra low-noise Ultra Low Noise Figure high linearity amplifier pair with built-in active bias and Variable Bias and Shutdown functionality shutdown features for balanced applications in the 1950 High IIP3: +17 dBm typ. MHz band. Shutdown functionality is achieved using 1 a single DC voltage input pin. High linearity is achieved GaAs E-pHEMT Technology through the use of Avago Technologies proprietary GaAs 3 Small package size: 4.0 x 4.0 x 0.85 mm 1 Enhancement-mode pHEMT process . It is housed in a RoHS and MSL1 compliant. 3 miniature 4.0 x 4.0 x 0.85 mm 16-pin Quad Flat No-lead (QFN). The compact footprint coupled with ultra low noise Typical Performances and high linearity makes MGA-16216 an ideal choice for basestation transmitters and receivers. 1950 MHz 4.8 V, 52.5 mA (typ per amplifier) Gain: 18.4 dB For applications > 1950 MHz, it is recommended to use MGA-16316 1950-4000 MHz. For applications < 1450 MHz, 2 NF: 0.32 dB it is recommended to use MGA-16116 450-1450 MHz. All 3 IIP3: 17.1 dBm products share the same package and pin out configuration. P1dB: 19.5 dBm Component Image Shutdown voltage Vsd range > 1.5 V 3 4.0 x 4.0 x 0.85 mm 16-Lead QFN Total shutdown current (Vsd1, Vsd2 = 3 V): 4.8 mA Applications Note: Package marking provides orientation and AVAGO Basestation Transmitter and Receivers requiring identification 16216 balanced configuration 16216 = Device Code YYWW = Date Code identifies year and YYWW Ultra low-noise RF amplifiers. work week of manufacturing XXXX XXXX = Last 4 digit of assembly lot Notes: number 1. Enhancement mode technology employs positive Vgs, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. Pin Configuration 2. Measured at RFin pin of packaged part, other losses deembedded. 3. Good RF practice requires all unused pins to be grounded. Pin Use Pin Use 1 RFIN1 10 GND 2 GND 11 GND Pin 1 Pin 12 3 GND 12 RFOUT1 Pin 2 Pin 11 4 RFIN2 13 Not used Attention: Observe precautions for Pin 17 Pin 3 Pin 10 5 Bias out2 14 Bias in1 handling electrostatic sensitive devices. Pin 4 Pin 9 ESD Machine Model = 60 V 6 Vsd2 15 Vsd1 ESD Human Body Model = 300 V 7 Bias in2 16 Bias out1 Refer to Avago Application Note A004R: 8 Not used 17 GND Electrostatic Discharge, Damage and Control. 9 RFOUT2 VIEW FROM THE TOP Pin 5 Pin 16 Pin 6 Pin 15 Pin 7 Pin 14 Pin 8 Pin 13 1 3 Absolute Maximum Rating T = 25 C Thermal Resistance A (Vd = 4.8 V, Idd = 52.5 mA, T =100 C) Symbol Parameter Units Absolute Maximum c q = 43.1C/W jc V Drain Voltage, RF output to ground V 5.5 dd Notes: I Drain Current mA 100 dd 1. Operation of this device is excess of any of these limits may cause permanent V Shutdown Voltage V 5.5 sd damage. P CW RF Input Power with LNA On dBm 27 in 2. Source lead temperature is 25 C. Derate 23 mW/C for Tc > 126 C. P CW RF Input Power with LNA Off dBm 27 in 3. Thermal resistance measured using 150 C P Power Dissipation mW 550 d Infra-Red Microscopy Technique. T Junction Temperature C 150 j T Storage Temperature -65 to 150 C stg Electrical Specifications T = 25 C, Vdd1 = Vdd2 = 4.8 V, Vsd1 = Vsd2 = 0 V at Rbias = 1 Kohm, RF performance at 1950 MHz, CW operation unless A otherwise stated. Symbol Parameter and Test Condition Units Min. Typ. Max. Vdd Supply Voltage V 4.8 Idd Total Supply Current per amplifier (Idq+Ibias) mA 44 52.5 65 Gain Gain dB 17.2 18.4 19.4 1 NF Noise Figure dB 0.32 0.55 OP1dB Output Power at 1dB Gain Compression dBm 19.5 2 IIP3 Input Third Order Intercept Point dBm 14 17.1 S11 Input Return Loss, 50 source dB -9.0 S22 Output Return Loss, 50 load dB -4.4 S12 Reverse Isolation dB -30 S31 Isolation between RFin1 and RFin2 dB -41.6 3 Vsd1,2 Maximum Shutdown voltage required to turn ON LNA V 0.5 3 Vsd1,2 Minimum Shutdown voltage required to turn OFF LNA V 2.0 4 Idq Current at Vdd with Vsd = 0 V mA 48.5 Current at Vdd with Vsd = 3 V mA 0.378 4 Isd Current at Vsd with Vsd = 0 V mA 4 Current at Vsd with Vsd = 3 V mA 0.176 4 Ibias Current at Vbias with Vsd = 0 V mA 3.0 Current at Vbias with Vsd = 3 V mA 4.542 Notes: 1. Noise figure at the DUT RF Input pin, board losses are deembedded. 2. IIP3 test condition: FRF1-FRF2 = 1 MHz with input power of -20 dBm per tone. 3. Vsd1 and Vsd2 are active LOW. 4. Refer to Figure 6 for more details. 2