RFgnd 16 5 NC Vg 15 6 NC GND 14 7 GND NC 13 8 NC MGA-30116 150MHz 1GHz Watt High Linearity Amplifi er Data Sheet Description Features Avago Technologies MGA-30116 is a high linearity Watt High linearity and P1dB PA with good OIP3 performance and exceptionally good Built in adjustable temperature compensated internal PAE at p1dB gain compression point, achieved through bias circuitry the use of Avago Technologies proprietary 0.25um GaAs 1 GaAs E-pHEMT Technology Enhancement-mode pHEMT process. Standard QFN 3X3 package The adjustable temperature compensated internal bias 5V supply circuit allowed the device to be operated at either class A or class AB operation Excellent uniformity in product specifi cations The MGA-30116 is housed inside a standard 16 pin QFN Tape-and-Reel packaging option available 3X3 package. MSL-1 and Lead-free High MTTF for base station application Applications Class A driver amplifi er for GSM/CDMA Base Stations. Specifi cations General purpose gain block. 900MHz 5V, 202.8mA (typical) 17.0 dB Gain Component Image 44.1 dBm Output IP3 16 pins QFN 3x3 27.7 dBm Output Power at 1dB gain compression 47.0% PAE at P1dB 2.0 dB Noise Figure NC 12 1 Vm Notes: 30116 VDD/RFout 11 2 Vbias 1. Enhancement mode technology employs positive gate voltage, YYWW GND thereby eliminating the need of negative gate voltage associated VDD/RFout 10 3 RF in XXXX with conventional depletion mode devices. NC 9 4 NC nc = not connected Attention: Observe precautions for handling electrostatic sensitive devices. BOTTOM VIEW TOP VIEW ESD Machine Model = 60 V ESD Human Body Model = 300 V Notes: Package marking provides orientation and identifi cation Refer to Avago Application Note A004R: 30116 = Device Part Number Electrostatic Discharge, Damage and Control. YYWW = Work Week and Year of manufacture XXXX = Last 4 digit of Lot number 1 Absolute Maximum Rating T =25C A Symbol Parameter Units Absolute Max. V Device Voltage, RF output to ground V 5.5 dd,max I Device Drain Current mA 400 ds,max V Control Voltage V 5.5 ctrl,max P CW RF Input Power dBm 22 in,max 3 P Total Power Dissipation W 2.2 diss T Junction Temperature C 150 j, max T Storage Temperature C -65 to 150 STG 2 Thermal Resistance = 33 C/W (Vdd=5, Ids=200mA, Tc=85C) jc Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using Infra-Red measurement technique. 3. This is limited by maximum Vdd and Ids. Derate 30.3mW/ C for Tc> 77.5 C. 4 Electrical Specifi cations T = 25C, Vdd =5V, Vctrl =5V, RF performance at 900 MHz, measured on demo board (see Fig. 7) unless otherwise A specifi ed. Symbol Parameter and Test Condition Units Min. Typ. Max. Ids Quiescent current mA 165 202.8 240 Ictrl Vctrl current mA - 7 - Gain Gain dB 15.5 17.0 18.5 5 OIP3 Output Third Order Intercept Point dBm 41 44.1 - OP1dB Output Power at 1dB Gain Compression dBm 26.2 27.7 - PAE Power Added Effi ciency % - 47.0 - NF Noise Figure dB - 2.0 - S11 Input Return Loss, 50 source dB - -14 - S22 Output Return Loss, 50 load dB - -14 - S12 Reverse Isolation dB - -23.5 - Notes: 4. Measurements at 900MHz obtained using demo board described in Figure 6 and 7. 5. 900 MHz OIP3 test condition: F - F = 10MHz with input power of -5dBm per tone measured at worse side band RF1 RF2 6. Use proper biasing, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note (if applicable) for more details. 2