RFgnd 16 5 NC Vg 15 6 NC GND 14 7 GND NC 13 8 NC MGA-30216 1.7-2.7GHz Watt High Linearity Amplifi er Data Sheet Description Features Avago Technologies MGA-30216 is a high linearity Watt High linearity and P1dB PA with good OIP3 performance and exceptionally good Unconditionally Stable across load condition PAE at p1dB gain compression point, achieved through Built in adjustable temperature compensated internal the use of Avago Technologies proprietary 0.25um GaAs bias circuitry Enhancement-mode pHEMT process. With prematch - required simple matching The device required simple matching components to 1 GaAs E-pHEMT Technology achieve wide bandwidth performance since it has a built in input prematch. Standard QFN 3X3 package The adjustable temperature compensated internal bias 5V supply circuit allowed the device to be operated at either class A Excellent uniformity in product specifi cations or class AB operation Tape-and-Reel packaging option available The MGA-30216 is housed inside a standard 16 pin QFN MSL-1 and Lead-free 3X3 package. High MTTF for base station application Applications Specifi cations Class A driver amplifi er for GSM/PCS/W-CDMA/WiMAX 2GHz 5V, 206mA (typ) Base Stations. 14.2 dB Gain General purpose gain block. 45.3 dBm Output IP3 Component Image 29 dBm Output Power at 1dB gain compression 48.9% PAE at P1dB 16 pin QFN 3X3 package 2.8 dB Noise Figure Notes: NC 12 1 Vm 1. Enhancement mode technology employs positive gate voltage, 30216 VDD/RFout 11 2 Vbias thereby eliminating the need of negative gate voltage associated YYWW GND with conventional depletion mode devices. VDD/RFout 10 3 RF in XXXX NC 9 4 NC Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 60 V BOTTOM VIEW TOP VIEW ESD Human Body Model = 300 V Refer to Avago Application Note A004R: Notes: Electrostatic Discharge, Damage and Control. Package marking provides orientation and identifi cation 30216 = Device Part Number YYWW = Year and Work Week of manufacture XXXX = Last 4 digit of Lot number 1 o Absolute Maximum Rating T =25 C A Symbol Parameter Units Absolute Max. V Device Voltage, RF output to ground V 5.5 dd,max I Device Drain Current mA 400 ds,max V Control Voltage V 5.5 ctrl,max P CW RF Input Power dBm 22 in,max 2 P Total Power Dissipation W 2.2 diss T Junction Temperature C 150 j, max T Storage Temperature C -65 to 150 STG 3 Thermal Resistance = 36C/W (Vdd=5, Ids=200mA, Tc=85C) jc Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. This is limited by maximum Vdd and Ids. Derate 28mW/ C for Tc>70.8 C. 3. Thermal resistance measured using Infra-Red measurement technique. 4 Electrical Specifi cations T = 25 C, Vdd =5V, Vctrl =5V, RF performance at 2.0 GHz, measured on demo board (see Fig. 7) unless otherwise specifi ed. A Symbol Parameter and Test Condition Units Min. Typ. Max. Ids Quiescent current mA 155 206 255 Ictrl Vctrl current mA - 7 - Gain Gain dB 13 14.0 16 5 OIP3 Output Third Order Intercept Point dBm 41 45.3 - OP1dB Output Power at 1dB Gain Compression dBm 27 29 - PAE Power Added Effi ciency % - 48.9 - NF Noise Figure dB - 2.8 - S11 Input Return Loss, 50 source dB - -18 - S22 Output Return Loss, 50 load dB - -22 - S12 Reverse Isolation dB - -21 - Notes: 4. Measurements at 2.0GHz obtained using demo board described in Figure 6 and 7. 5. 2.0GHz OIP3 test condition: F - F = 10MHz with input power of -5dBm per tone measured at worse side band RF1 RF2 6. Use proper bias, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note (if applicable) for more details. 2