MGA-31289 0.25W High Gain Driver Amplifier 1500 - 3000 MHz Data Sheet Description Features Avago Technologies MGA-31289 is a 0.25W high gain ROHS compliant driver amplifier MMIC with good gain flatness, housed in Halogen free a standard SOT-89 plastic package. The device features (1) High linearity at low DC bias power high linearity performance, excellent input and output return loss, and low noise figure. The device can be easily High Gain matched to obtain optimum power and linearity. Good gain flatness MGA-31289 is externally tunable to operate within 1.5GHz Low noise figure to 3GHz frequency range applications. With high IP3, low Excellent uniformity in product specification noise figure and wideband operation, MGA-31289 may be SOT-89 standard package utilized as a driver amplifier in the transmit chain and as a second stage LNA in the receive chain. Specifications This device uses Avago Technologies proprietary 0.25um At 1.9GHz, Vd = 5V, Id = 124mA (typ) 25C GaAS Enhancement mode PHEMT process. OIP3 = 41.8dBm Pin connections and Package Marking Noise Figure = 2dB Gain = 18.70dB Gain Flatness (+/-50MHz) = 0.1dB P1dB = 23.6dBm 12X IRL = 16.2dB, ORL = 10.3dB Note: 1. The MGA-31289 has a good LFOM of 14dB. Linearity Figure of Merit 3 2 1 1 2 3 (LFOM) is essentially OIP3 divided by DC bias power. RFout GND RFin RFin GND RFout Vdd Top View Bottom View C Notes: Top View : Package marking provides orientation and identification 12 = Device Code C X = Date Code character identifies month of manufacturing C Attention: Observe precautions for handling electrostatic sensitive devices. L ESD Machine Model = 150 V RFin RFout ESD Human Body Model = 2000 V Refer to Avago Application Note A004R: C C Electrostatic Discharge, Damage and Control. Figure 1. Simplified Schematic diagram(1) MGA-31289 Absolute Maximum Rating T =25C Thermal Resistance A 3 Thermal Resistance Symbol Parameter Units Absolute Maximum (V = 5.0V, T = 85C) = 50C/W d c jc I Drain Current mA 165 d,max Notes: 1. Operation of this device in excess of any of V Device Voltage V 5.5 d,max these limits may cause permanent damage. (2) P Power Dissipation mW 907.5 d 2. This is limited by maximum Vd and Id. Board temperature (T ) is 25C. For T >104C, derate C C P CW RF Input Power dBm 25 in the device power at 20mW per C rise in board temperature adjacent to package bottom. T Junction Temperature C 150 j 3. Thermal resistance measured using Infra-Red Microscopy Technique. T Storage Temperature C -65 to 150 stg (1) MGA-31289 Electrical Specifications T = 25C, V = 5V, unless noted A d Symbol Parameter and Test Condition Frequency Units Min. Typ. Max. I Quiescent current N/A mA 101 124 143 ds NF Noise Figure 1.9GHz dB 2 2.45 2.5GHz 2 Gain Gain 1.9GHz dB 17 18.7 20 2.5GHz 17.7 2 OIP3 Output Third Order Intercept Point 1.9GHz dBm 38.2 41.8 2.5GHz 41.5 P1dB Output Power at 1dB Gain Compression 1.9GHz dBm 21.8 23.6 2.5GHz 23.7 PAE Power Added Efficiency at P1dB 1.9GHz % 36.4 2.5GHz 34.8 IRL Input Return Loss 1.9GHz dB 16.2 2.5GHz 15.5 ORL Output Return Loss 1.9GHz dB 10.3 2.5GHz 10.8 ISOL Isolation 1.9GHz dB 27.3 2.5GHz 27.7 Notes: 1. Typical performance obtained from a test circuit described in Figure 25. 2. OIP3 test condition: F1 - F2 = 10MHz, with input power of -10dBm per tone measured at worst case side band. 2