MGA-31389 0.1W High Gain Driver Amplifier 50MHz ~ 2GHz Data Sheet Description Features Avago Technologies MGA-31389 is a high performance ROHS compliant Driver Amplifier MMIC, housed in a standard SOT-89 plastic Halogen free package. The device features flat high gain with excellent (1) High IP3 at low DC bias power input and output return loss, as well as superior linearity performance. The device can be easily matched to obtain High gain, with good gain flatness desired performance. Low noise figure MGA-31389 is especially ideal for 50 wireless infrastruc- Advanced enhancement mode PHEMT Technology ture application within the 50 MHz to 2GHz frequency Excellent uniformity in product specification range applications. With high IP3 and low noise figure and SOT-89 standard package wideband operation, the MGA-31389 may be utilized as a driver amplifier in the transmit chain and as a second Specifications stage LNA in the receiver chain. At 0.9 GHz, Vd = 5 V, Id = 73 mA (typ) 25 C This device uses Avago Technologies proprietary 0.25 mm GaAs Enhancement mode PHEMT process. OIP3 = 38.6 dBm Noise Figure = 2.0 dB Pin connections and Package Marking Gain = 21.3 dB, Gain flatness ( 50 MHz) = 0.14 dB P1dB = 22.2 dBm IRL = 30.5 dB, ORL = 14.7 dB 13X Note: 1. The MGA-31389 has a superior LFOM of 13.3 dB. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. 3 2 1 1 2 3 Simplified Schematic RFin GND RFout RFout GND RFin Vdd Top View Bottom View Note: C Package marking provides orientation and identification 13 = Device Code X = Date Code character indentifies month of manufacturing C C Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 75 V L RFout RFin ESD Human Body Model = 1000 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. C C Figure 1. Simplified Schematic diagram (1) MGA-31389 Absolute Maximum Rating T =25 C Thermal Resistance A (3) Symbol Parameter Units Absolute Max. Thermal Resistance (V = 5.0 V, T = 85 C), = 60.0 C/W d c jc V Drain Voltage, RF output to ground V 5.5 d, max Notes: (2) P Power Dissipation mW 605 d 1. Operation of this device in excess of any of P CW RF Input Power dBm 20 in these limits may cause permanent damage. 2. Source lead temperature is 25 C. Derate 16.7 T Junction Temperature C 150 j mW/ C for T >128.0 C. L T Storage Temperature C -65 to 150 STG 3. Thermal resistance measured using 150 C Infra-Red Microscopy Technique. (1) MGA-31389 Electrical Specification T = 25 C, V = 5 V, unless noted C d Symbol Parameter and Test Condition Frequency Units Min. Typ. Max. I Quiescent Current N/A mA 62 73 90 ds NF Noise Figure 0.45 GHz 2.3 0.9 GHz dB 2.0 2.5 1.5 GHz 2.0 Gain Gain 0.45 GHz 21.5 0.9 GHz dB 20 21.3 23 1.5 GHz 20.6 (2) (2) OIP3 Output Third Order Intercept Point 0.45 GHz 38.6 (2) 0.9 GHz dBm 36.3 38.6 (2) 1.5 GHz 41.3 P1dB Output Power at 1 dB Gain Compression 0.45 GHz 22.0 0.9 GHz dBm 20.6 22.2 1.5 GHz 21.7 PAE Power Added Efficiency at P1dB 0.45 GHz 41.0 0.9 GHz % 41.2 1.5 GHz 38.4 IRL Input Return Loss 0.45 GHz 24.3 0.9 GHz dB 30.5 1.5 GHz 15.3 ORL Output Return Loss 0.45 GHz 11.4 0.9 GHz dB 14.7 1.5 GHz 12.1 ISOL Isolation 0.45 GHz 27.2 0.9 GHz dB 27.6 1.5 GHz 28.6 Note : 1. Measurements obtained from a test circuit described in Figure 34 2. OIP3 test condition: F1 - F2 = 10 MHz, with input power of -14 dBm per tone measured at worst case side band. 2