MGA-31489 0.1W High Gain Driver Amplifier 1.5GHz ~ 3GHz Data Sheet Description Features Avago Technologies MGA-31489 is a high performance ROHS compliant Driver Amplifier MMIC, housed in a standard SOT-89 plastic Halogen free package. The device features flat high gain with excellent 1 High IP3 at low DC bias power input and output return loss, as well as superior linearity performance. The device can be easily matched to obtain High gain, with good gain flatness desired performance. Low noise figure MGA-314389 is especially ideal for 50 wireless infrastruc- Advanced enhancement mode PHEMT Technology ture application within the 1.5 GHz to 3 GHz frequency Excellent uniformity in product specification range applications. With high IP3 and low noise figure and SOT-89 standard package wideband operation, the MGA-31489 may be utilized as a driver amplifier in the transmit chain and as a second Specifications stage LNA in the receiver chain. At 1.9 GHz, Vd = 5 V, Id = 69 mA (typ) 25 C This device uses Avago Technologies proprietary 0.25 mm GaAs Enhancement mode PHEMT process. OIP3 = 37.3 dBm Noise Figure = 1.9 dB Pin connections and Package Marking Gain = 19.5 dB, Gain Flatness ( 50 MHz) = 0.11 dB P1dB = 21.9 dBm IRL = 17.2 dB, ORL = 10.1 dB 14X Note: 1. The MGA-31489 has a superior LFOM of 11.9 dB. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. 1 2 3 3 2 1 Simplified Schematic RFin GND RFout RFout GND RFin Vdd Top View Bottom View C Note: Top View: Package marking provides orientation and identification 14 = Device Code C X = Date Code character indentifies month of manufacturing C Attention: Observe precautions for L handling electrostatic sensitive devices. RFout RFin ESD Machine Model = 120 V ESD Human Body Model = 1400 V C C Refer to Avago Application Note A004R: L Electrostatic Discharge, Damage and Control. Figure 1. Simplified Schematic diagram 1 MGA-31489 Absolute Maximum Rating T =25 C Thermal Resistance A 3 Symbol Parameter Units Absolute Max. Thermal Resistance (V = 5.0 V, T = 85 C), = 51.7 C/W d c jc V Drain Voltage, RF output to ground V 5.5 d, max Notes: (2) P Power Dissipation mW 605 d 1. Operation of this device in excess of any of P CW RF Input Power dBm 20 in these limits may cause permanent damage. 2. Source lead temperature is 25 C. Derate 19.3 T Junction Temperature C 150 j mW/ C for T >131.4 C. L T Storage Temperature C -65 to 150 STG 3. Thermal resistance measured using 150 C Infra-Red Microscopy Technique. 1 MGA-31489 Electrical Specification T = 25 C, V = 5 V, unless noted C d Symbol Parameter and Test Condition Frequency Units Min. Typ. Max. I Quiescent Current N/A mA 57 69 84 ds NF Noise Figure 1.9 GHz dB 1.9 2.35 2.5 GHz 2.0 Gain Gain 1.9 GHz dB 18.2 19.5 21.2 2.5 GHz 20.5 (2) (2) OIP3 Output Third Order Intercept Point 1.9 GHz dBm 34.8 37.3 (2) 2.5 GHz 37.2 P1dB Output Power at 1 dB Gain Compression 1.9 GHz dBm 20.1 21.9 2.5 GHz 22.2 PAE Power Added Efficiency at P1dB 1.9 GHz % 39.1 2.5 GHz 40.2 IRL Input Return Loss 1.9 GHz dB 17.2 2.5 GHz 15.9 ORL Output Return Loss 1.9 GHz dB 10.1 2.5 GHz 18.5 ISOL Isolation 1.9 GHz dB 27.0 2.5 GHz 29.3 Note : 1. Measurements obtained from a test circuit described in Figure 25. 2. OIP3 test condition: F1 - F2 = 10 MHz, with input power of -12 dBm per tone measured at worst case side band. 2