MGA-31689 0.5 W High Gain Driver Amplifier Data Sheet Description Features Avago Technologies MGA-31689 is a 0.5 W, high Gain, ROHS compliant high performance Driver Amplifier MMIC, housed in a Halogen free standard SOT-89 plastic package. The device required 1 High linearity at low DC bias power simple matching components to achieve optimum per- formance within specific 100 to 200 MHz bandwidth. High Gain Low noise figure MGA-31689 is especially ideal for wireless infrastructure applications that operate within the 1.5 GHz to 3 GHz High OIP3 frequency range. With high IP3 and low noise figure, the Advanced enhancement mode PHEMT Technology MGA-31689 may be utilized as a driver amplifier in the Excellent uniformity in product specification transmit chain and as second or third stage LNA in the re- ceive chain. For optimum performance at lower frequency SOT-89 standard package from 450 MHz to 1500 MHz, MGA-31589 is recommended. Specifications MGA-31689s high gain and high linearity features are achieved through the use of Avago Technologies propri- At 1900 MHz, Vdd = 5 V, Idd = 168 mA (typical) at 25 C etary 0.25 mm GaAs Enhancement-mode pHEMT process. OIP3 = 44.9 dBm Noise Figure = 1.9 dB Pin connections and Package Marking Gain = 18.1 dB P1dB = 27.6 dBm IRL = 14.0 dB, ORL = 11.5 dB 16X Note: 1. The MGA-31689 has a superior LFOM of 15.5. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. 3 2 1 1 2 3 RFin GND RFout RFout GND RFin VDD C Top View Bottom View Note: C Top View: Package marking provides orientation and identification 16 = Device Code X = Date Code character indentifies month of manufacturing C L Attention: Observe precautions for MGA-31689 handling electrostatic sensitive devices. C C RF IN RF OUT ESD Machine Model = 150 V ESD Human Body Model = 650 V L Refer to Avago Application Note A004R: L C C Electrostatic Discharge, Damage and Control. Figure 1. Simplified Schematic diagram 1 MGA-31689 Absolute Maximum Rating Thermal Resistance 3 Symbol Parameter Units Absolute Max. Thermal Resistance (V = 5.0 V, I = 168 mA, T = 85 C), dd dd c V Drain Voltage, RF output to ground V 5.5 dd, max = 44 C/W jc (2) P Power Dissipation mW 1050 d Notes: P CW RF Input Power dBm 15 in 1. Operation of this device in excess of any of these limits may cause permanent damage. T Junction Temperature C 150 j 2. Source lead temperature is 25 C. Derate 22.7 T Storage Temperature C -65 to 150 STG mW/ C for T >103.8 C. L 3. Thermal resistance measured using 150 C Infra-Red Microscopy Technique. 1 MGA-31689 Electrical Specification T = 25 C, Z = 50 W, V = 5 V, unless specified. C o dd Frequency Symbol Parameter and Test Condition (MHz) Units Min. Typ. Max. I Quiescent Current NA mA 140 168 195 ds NF Noise Figure 1900 dB 1.9 2.8 2600 2.2 Gain Gain 1900 dB 16.6 18.1 19.6 2600 16.7 2 OIP3 Output Third Order Intercept Point 1900 dBm 41 44.9 3 2600 44.8 P1dB Output Power at 1 dB Gain Compression 1900 dBm 26.5 27.6 2600 26.8 PAE Power Added Efficiency at P1dB 1900 % 48.0 2600 42.6 IRL Input Return Loss 1900 dB 14.0 2600 13.2 ORL Output Return Loss 1900 dB 11.5 2600 10.5 ISOL Isolation 1900 dB 27.3 2600 27.6 Note : 1. Measurements obtained from a test circuit described in Figure 27. 2. OIP3 test condition: F1 - F2 = 1.0 MHz, with input power of -6 dBm per tone measured at worst case side band. 3. OIP3 test condition: F1 - F2 = 1.0 MHz, with input power of -5 dBm per tone measured at worst case side band. 2