MGA-43024 2.4 GHz WLAN Power Amplifier Module Data Sheet Description Features Avago Technologies MGA-43024 is a fully matched power Linear P EVM =2.5% (802.11n): 27.8 dBm out amplifier for use in the WLAN band (2401- 2484 MHz). High Linear P with Restricted Band Emission (802.11n) of out linear output power at 5.0 V is achieved through the use -48 dBm 2412 MHz: 22.2 dBm of Avagos proprietary 0.25 m GaAs Enhancement-mode Linear P with Restricted Band Emission (802.11n) of out pHEMT process. MGA-43024 is housed in a miniature 5.0 -48 dBm 2462 MHz: 22.2 dBm mm 5.0 mm molded-chip-on-board (MCOB) module package. A detector is also included on-chip. The compact High gain : 40.5 dB footprint coupled with high gain, high linearity and good Fully matched input and output ports efficiency makes the MGA-43024 an ideal choice as a Built-in detector power amplifier for small cell enterprise WLAN PA applica - 1 tions. GaAs E-pHEMT Technology Low-cost small package size: (5.0 5.0 0.82) mm Component Image MSL3 (5.0 5.0 0.82) mm Package Outline Lead-free/Halogen-free/RoHS compliance Note: 1. Enhancement mode technology employs positive V , and so GS A Notes: VAGO eliminates the need for negative gate voltage associated with Package marking provides orientation 43024 conventional depletion mode devices. and identification YYWW 43024 = Device part number Applications YYWW = Year and work week XXXX XXXX = Assembly lot number Enterprise WLAN access points Small cell with embedded WLAN TOP VIEW Pin Configuration Attention: Observe precautions for handling electrostatic-sensitive devices. ESD Machine Model = 60 V ESD Human Body Model = 400 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Gnd 1 21 Gnd Gnd 2 20 Gnd NC 3 19 RFout Functional Block Diagram RFin 4 18 RFout Vdd1 Vdd2 Vdd3 NC 5 17 RFout 16 Gnd Gnd 6 (5.0 5.0 0.82) mm NC 7 15 Gnd st nd 1 Stage rd 2 Stage RFin 3 Stage RFout Biasing Circuit Vc1 Vc2 Vc3 VddBias Vdet Top View Vc1 8 28 Vdd1 Vc2 9 27 Gnd 26 Vdd2 Vc3 10 Gnd 11 25 Gnd 24 Vdd3 VddBias 12 23 Vdd3 Gnd 13 Vdet 14 22 Vdd3 1 2,3 Absolute Maximum Rating T = 25 C Thermal Resistance A q = 13 C/W Symbol Parameter Units Absolute Max. JC Notes: V , V Supply voltages, bias supply voltage V 5.5 dd ddBias 1. Operation of this device in excess of any V Control voltage V (V ) c dd of these limits may cause permanent damage. P CW RF Input Power dBm 20 in,max 2. Thermal resistance measured using Infra- 3 P Total Power Dissipation W 6.0 Red Measurement Technique. diss 3. Board temperature (T ) is 25 C , for T C C T Junction Temperature C 150 j > 72 C derate the device power at 77 T Storage Temperature C -65 to 150 mW per C rise in board (package belly) STG temperature. Electrical Specifications T = 25 C, V = V =5.0 V, V =2.0 V, V =2.2 V, V =2.0 V, RF performance at 2442 MHz, IEEE 802.11n 64-QAM, 20 MHz A dd ddbias c1 c2 c3 Bandwidth, MCS 7, 800 ns Guard Interval, unless otherwise stated. Symbol Parameter and Test Condition Units Min. Typ. Max. V Supply Voltage V 5.0 dd I Quiescent Supply Current mA 250 480 650 dq I Total Supply Current at linear output 21 dBm (2412 MHz) mA 400 540 800 ddtotal Total Supply Current at linear output 21 dBm (2462 MHz) mA 400 550 800 Total Supply Current at linear output 27 dBm mA 700 S21 Small Signal Gain dB 40.5 S11 dB 12.5 Input Return Loss, 50 source S22 Output Return Loss, 50 source dB 13.5 OP1dB Output Power at 1 dB Gain Compression dBm 36 PAE Power Added Efficiency at linear output 21 dBm (2412 MHz) % 4.4 Power Added Efficiency at linear output 21 dBm (2462 MHz) % 5.2 Power Added Efficiency at linear output 27 dBm % 14.8 2fo 2nd Harmonic Distortion at 27 dBm dBc -34.6 3fo 3rd Harmonic Distortion at 27 dBm dBc -53.3 Linear P Restricted Band Emission (RBE) 21 dBm at 2390 MHz (2412 MHz) dBm -50.5 -48 out Restricted Band Emission (RBE) 21 dBm at 2483.5 MHz (2462 MHz) dBm -50.5 -48 Error Vector Magnitude at 2.5% dBm 27.8 2