MGA-43040 High Linearity (2.3 2.4) GHz Power Amplifier Module Data Sheet Description Features 1 Avago Technologies MGA-43040 is a fully matched power High linearity performance: Typ -48dBc ACPR1 at amplifier for use in the (2.3 2.4) GHz band. High linear 27.0 dBm linear output power (biased with 5V supply) output power at 5V is achieved through the use of Avago High Gain : 40 dB Technologies proprietary 0.25 m GaAs Enhancement- Good efficiency mode pHEMT process. MGA-43040 is housed in a miniature 5.0 mm 5.0 mm molded-chip-on-board (MCOB) module Fully matched package. A detector is also included on-chip. The compact Built-in detector footprint coupled with high gain, high linearity and good 2 GaAs E-pHEMT Technology efficiency makes the MGA-43040 an ideal choice as a power amplifier for small cell BTS PA applications. Low cost small package size: (5.0 5.0 0.9) mm Specifications Applications 2.35 GHz 5.0 V, I = 340 mA (typ), LTE 20 MHz 100 dq total Final stage high linearity amplifier for Picocell and RB Enterprise Femtocell PA targeted for small cell BTS downlink applications. PAE: 13% 1 27.0 dBm linear P ACPR1 = -48 dBc out Component Image 40 dB Gain (5.0 5.0 0.9) mm Package Outline Detector range: 20 dB A Notes: VAGO Notes: Package marking provides orientation 43040 1. LTE 20 MHz 100 RB Test Mode 1.1 downlink signal and identification 2. Enhancement mode technology employs positive V , and so GS YYWW 43040 = Tentative device part number eliminates the need for negative gate voltage associated with YYWW = Year and work week XXXX conventional depletion mode devices XXXX = Assembly lot number Functional Block Diagram TOP VIEW Vdd1 Vdd2 Vdd3 Pin Configuration st nd rd 1 Stage 2 Stage RFin 3 Stage RFout Gnd 1 21 Gnd Biasing Circuit Gnd 2 20 Gnd NC 3 19 RFout Vc1 Vc2 Vc3 VddBias Vdet RFin 4 18 RFout NC 5 17 RFout Attention: Observe precautions for handling electrostatic sensitive devices. 16 Gnd Gnd 6 ESD Machine Model = 70 V (5.0 5.0 0.9) mm NC 7 15 Gnd ESD Human Body Model = 350 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Vc1 8 28 Vdd1 Vc2 9 27 Gnd 26 Vdd2 Vc3 10 Gnd 11 25 Gnd 24 Vdd3 VddBias 12 23 Vdd3 Gnd 13 Vdet 14 22 Vdd3 1 2,3 Absolute Maximum Rating T = 25 C Thermal Resistance A q = 14.2 C/W Symbol Parameter Units Absolute Max. jc Notes: Vdd, VddBias Supply voltages, bias supply voltage V 6 1. Operation of this device in excess of any Vc Control Voltage V (Vdd) of these limits may cause permanent damage. P CW RF Input Power dBm 20 in,max 2. Thermal resistance measured using Infra- 3 P Total Power Dissipation W 5.3 Red Measurement Technique. diss 3. Board temperature (T ) is 25 C , for T > B B T Junction Temperature C 150 j 74.7 C derate the device power at 70.4 T Storage Temperature C -65 to 150 mW per C rise in Board (package belly) STG temperature. Electrical Specifications T = 25 C, Vdd1,2,3 = Vddbias=5.0 V, Idqtotal = 350 mA, RF performance at 2.35 GHz, unless otherwise stated. A Symbol Parameter and Test Condition Units Min. Typ. Max. Vdd Supply Voltage V 5.0 Idq total Quiescent Supply Current mA 340 Gain Gain dB 35 40 OP1dB Output Power at 1dB Gain Compression dBm 35 ACPR1 P =27.0 dBm LTE 20 MHz 100 RB Test Mode 1.1 downlink signal dBc -48 -45 out PAE Power Added Efficiency % 13 S11 dB 20 Input Return Loss, 50 source DetR Detector RF dynamic range dB 20 2fo 2fo Harmonics dBc -27 4 Product Consistency Distribution Charts 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.4 0.5 0.6 0.7 0.8 0.9 Figure 1. Idq total, Nominal = 340mA Figure 2. Idd total at Pout=27.0dBm, Nominal = 700mA 33 35 37 39 41 43 45 47 49 6 7 8 9 10 11.5 13 14.5 16 17.5 19 Figure 3. Gain at Pout=27.0dBm, LSL= 35dB, Nominal = 40dB Figure 4. PAE at Pout=27.0dBm, Nominal = 13% -50.5 -49 -48 -47 -46 -45 -44 Figure 5. ACPR1 at Pout=27.0dBm, USL= -45dBc, Nominal = -47.7dBc Note: 4. Distribution data sample size is 1500 samples taken from 3 different wafer lots. TA=25C, Vdd=VddBias=5.0V, Vc1=2.0V, Vc2=1.8V, Vc3=1.8V, RF performance at 2.35 GHz unless otherwise stated. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2