MGA-43228 (2.32.5) GHz 29dBm High Linearity Wireless Data Power Amplifi er Data Sheet Description Features Avago Technologies MGA-43228 is a power amplifi er for High gain: 38.5dB use in the (2.3-2.5)GHz band. High linear output power High linearity performance: 29.2dBm at 5V supply (2.5% at 5V is achieved through the use of Avago Technologies EVM, 64-QAM FEC rate OFDMA, 10MHz bandwidth) proprietary 0.25um GaAs Enhancement-mode pHEMT High effi ciency: 16.1% process. It is housed in a miniature 5.0mm x 5.0mm x 0.85mm 28-lead QFN package. It also includes shutdown Built-in detector and shutdown switches and switchable gain functions. A detector is also included Switchable gain: 23.6dB attenuation using one single on-chip. The compact footprint coupled with high gain CMOS compatible switch pin and high effi ciency make the MGA-43228 an ideal choice ETSI spectral mask compliant at 29dBm output power as a power amplifi er for IEEE 802.16 (WiMAX) and WLL 1 applications. GaAs E-pHEMT Technology 3 Low cost small package size: 5.0 x 5.0 x 0.85 mm Component Image MSL-2a and lead-free 3 5.0 x 5.0 x 0.85 mm 28-lead QFN Package (Top View) Usable at 3.3V supply for lower supply voltage applications Specifi cations 2.4GHz Vdd = Vbias = 5.0V, Vc = 2.1V (R2 = 1.2k, R3 = 43228 RFout 300, R4 = 1.2k as shown in Figure 36), Iqtotal = 500mA Gnd RFin RFout YYWW RFout (typ), IEEE 802.16e 64-QAM OFDMA, FEC rate XXXX Vbyp 38.5 dB Gain 29.2 dBm Linear Pout (2.5% EVM) 16.1% PAE Linear Pout Notes: Package marking provides orientation and identifi cation 2.6V Vdet Linear Pout 43228 = Device part number 23.6 dB Switchable Gain Attenuation YYWW = Year and work week XXXX = Assembly lot number 25A Shutdown Current Applications Functional Block Diagram Vdd1 Vdd2 Vdd3 High linearity amplifi er for IEEE 802.16 fi xed terminal amplifi er WLL amplifi er RFin RFout Note: 1. Enhancement mode technology employs positive Vgs, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. Gain switch and bias circuitry Vbyp Vc1 Vc2 Vc3 Vbias Vdet Vc1 Vdd1 Vc2 Gnd Vc3 Vdd2 Vdd3 Vbias Vdd3 Vdet Vdd3 1 Absolute Maximum Rating T =25C Thermal Resistance A 2 Symbol Parameter Units Absolute Max. Thermal Resistance = 11.7C/W jc Vdd, Vbias Supply voltages, bias supply voltage V 6.0 Notes: Vc Control Voltage V (Vdd) 1. Operation of this device in excess of any of P CW RF Input Power dBm 20 in,max these limits may cause permanent damage. 2. Thermal resistance measured using Infra- 3 P Total Power Dissipation W 8.0 diss Red Measurement Technique. T Junction Temperature C 150 j,MAX 3. Board temperature (T ) is 25C, for T >56.4C c c derate the device power at 85.5mW per C T Storage Temperature C -65 to 150 STG rise in board temperature adjacent to package bottom. Electrical Specifi cations T = 25C, Vdd = Vbias = 5.0V, Vc = 2.1V (R2 = 1.2k, R3 = 300, R4 = 1.2k as shown in Figure 36), Vbyp = 0V, Iqtotal A = 500mA, RF performance at 2.4 GHz, IEEE 802.16e 64-QAM, rate FEC, 10MHz bandwidth OFDMA operation unless otherwise stated. Symbol Parameter and Test Condition Units Min. Typ. Max. Vdd Supply Voltage V 5.0 Iqtotal Quiescent Supply Current (normal high gain mode) mA 500 Quiescent Supply Current (low gain mode, Vbyp = 5.0V) mA 500 Gain Gain dB 35.0 38.5 OP1dB Output Power at 1dB Gain Compression dBm 35.5 Pout 5V Linear Output Power 2.5% EVM with 64-QAM OFDMA dBm 27.7 29.2 modulation per IEEE 802.16e specs, 50% duty cycle, rate FEC Itotal 5V Total current draw at Pout 5V level mA 1023 1250 S11 Input Return Loss, 50 source dB -10 S22 Output Return Loss, 50 source dB -11 S12 Reverse Isolation dB 60 Atten Gain attenuation in low gain mode dB 20.5 23.6 26.5 Vdet Detector output DC voltage 29dBm linear Pout V 2.6 DetR Detector RF dynamic range dB 20 NF Noise fi gure dB 2.1 S Stability under load VSWR of 6:1 (all phase angle), spurious output dBc -60 2