MGA-43628 High Linearity (2.0 2.2) GHz Power Amplifi er Module Data Sheet Description Features 1 High linearity performance: Typ -50 dBc ACLR1 at Avago Technologies MGA-43628 is a fully matched power 27.2 dBm linear output power (biased with 5.0 V ope- amplifi er for use in the (2.0-2.2) GHz band. High linear rating voltage) output power at 5 V is achieved through the use of Avago Technologies proprietary 0.25 m GaAs Enhancement- High Gain: 41.5 dB mode pHEMT process. MGA-43628 is housed in a miniature Good effi ciency 5.0 mm x 5.0 mm molded-chip-on-board (MCOB) module Fully matched package. A detector is also included on-chip. The compact Built-in detector footprint coupled with high gain, high linearity and good effi ciency makes the MGA-43628 an ideal choice as a 2 GaAs E-pHEMT Technology power amplifi er for small cell BTS PA applications. Low cost small package size: 5.0 x 5.0 x 0.9 mm MSL3 Applications Lead free/Halogen free RoHS compliance Final stage high linearity amplifi er for Picocell and Enterprise Femtocell PA targeted for small cell BTS Specifi cations downlink applications. 2.14 GHz 5.0 V, Idqtotal = 440 mA (typ), W-CDMA Test model 1, Component Image 64 DPCH downlink signal 5.0 x 5.0 x 0.9 mm Package Outline PAE: 14% 1 27.2 dBm linear Pout ACLR1 = -50 dBc A Note: VAGO Package marking provides orientation 41.5 dB Gain 43628 and identifi cation Detector range: 20 dB YYWW 43628 = Device part number YYWW = year and work week XXXX Note: XXXX = assembly lot number 1. W-CDMA Test model 1, 64DPCH downlink signal. 2. Enhancement mode technology employs positive Vgs, thereby TOP VIEW eliminating the need of negative gate voltage associated with conventional depletion mode devices. Pin Confi guration Functional Block Diagram Vdd1 Vdd2 Vdd3 Gnd 1 21 Gnd st nd 1 Stage 2 Stage rd 20 Gnd RFin 3 Stage RFout Gnd 2 19 RFout NC 3 18 RFout RFin 4 Biasing Circuit NC 5 17 RFout 16 Gnd Gnd 6 Vc1 Vc2 Vc3 VddBias Vdet (5.0 x 5.0 x 0.9) mm 15 Gnd NC 7 Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 60 V ESD Human Body Model = 450 V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Vc1 8 28 Vdd1 Vc2 9 27 Gnd Vc3 10 26 Vdd2 Gnd 11 25 Gnd VddBias 12 24 Vdd3 Gnd 13 23 Vdd3 Vdet 14 22 Vdd3 1 2,3 Absolute Maximum Rating T = 25 C Thermal Resistance A = 13C/W Symbol Parameter Units Absolute Max. jc Notes: Vdd, Supply voltages, bias supply voltage V 6 1. Operation of this device in excess of any VddBias of these limits may cause permanent Vc Control Voltage V (Vdd) damage. 2. Thermal resistance measured using Infra- P CW RF Input Power dBm 20 in,max Red Measurement Technique at Vdd = 3 P Total Power Dissipation W 7.2 5.5 V operating voltage. diss 3. Board temperature (TB) is 25 C, for TB T Junction Temperature C 150 j > 56.4 C derate the device power at 77 mW per C rise in Board (package belly) tem- T Storage Temperature C -65 to 150 STG perature. Electrical Specifi cations T = 25 C, Vdd = VddBias = 5.0 V , Vc1=2.4V, Vc2=1.6V, Vc3=2.2V, Idqtotal = 440 mA, RF performance at 2.14 GHz, W-CDMA A Test model 1, 64DPCH downlink signal operation unless otherwise stated. Symbol Parameter and Test Condition Units Min. Typ. Max. Vdd Supply Voltage V 5.0 Idqtotal Quiescent Supply Current mA 440 600 Gain Gain dB3841.5 OP1dB Output Power at 1dB Gain Compression dBm 36.8 ACLR1 Pout = 27.2 dBm W-CDMA Test model 1, 64DPCH downlink signal dBc -50 PAE Power Added Effi ciency % 11.5 14 Pout = 27.2 dBm S11 Input Return Loss, 50 source dB 15.8 DetR Detector RF dynamic range dB 20 T = 25 C, Vdd = VddBias = 5.5 V , Vc1=2.4V, Vc2=1.6V, Vc3=2.2V, Idqtotal = 490 mA, RF performance at 2.14 GHz, A W-CDMA Test model 1, 64DPCH downlink signal operation unless otherwise stated. Symbol Parameter and Test Condition Units Typ. Vdd Supply Voltage V 5.5 Idqtotal Quiescent Supply Current mA 490 GainGain dB41.5 OP1dB Output Power at 1dB Gain Compression dBm 37.6 ACLR1 Pout = 27.9 dBm W-CDMA Test model 1, 64DPCH downlink signal dBc -50 PAE Pout = 27.9 dBm Power Added Effi ciency % 13.2 S11 Input Return Loss, 50 source dB 16.1 DetR Detector RF dynamic range dB 20 2