42x MGA-52543 Low Noise Amplifi er Data Sheet Description Features Lead-free Option Available Avago Technologies MGA-52543 is an economical, easy- to-use GaAs MMIC Low Noise Amplifier (LNA), which Operating frequency: is designed for use in LNA and driver stages. While a 0.4 GHz ~ 6.0 GHz capable RF/microwave amplifi er for any low noise and Minimum noise fi gure: 1.61 dB at 1.9 GHz high linearity 0.4 to 6 GHz application, the LNA focus is Associated gain : 15 dB at 1.9 GHz Cellular/PCS base stations. 1.9 GHz performance tuned for VSWR < 2:1 To attain NF condition, some simple external matching is min Noise fi gure: 1.9 dB required. The MGA-52543 features a calculated NF of 1.61 min dB and 15 dB associated gain at 1.9 GHz from a cascode Gain: 14 dB stage, feedback FET amplifi er. The input and output are P : +17.5 dBm 1dB partially matched to be near 50 . Input IP3: +17.5 dBm For base station radio card unit LNA application where Single supply 5.0 V operation better than 2:1 VSWR is required, a series inductor on the input and another series inductor on the output can be Applications added externally. The resulting Noise Figure is typically Cellular/PCS base station radio card LNA 1.9 dB with 14 dB Gain at 1.9 GHz. With a single 5.0V supply, the LNA typically draws 53 mA. This alignment High dynamic range amplifi er for base stations, WLL, results in an Input Intercept Point of 17.5 dBm. WLAN, and other applications The MGA-52543 is a GaAs MMIC, fabricated using Avago Technologies cost- eff ective, reliable PHEMT (Pseudomor- Attention: Observe precautions for phic High Electron Mobility Transistor) process. It is housed handling electrostatic sensitive devices. ESD Machine Model (Class A) in the SOT-343 (SC70 4-lead) package. This package off ers ESD Human Body Model (Class 1A) miniature size (1.2 mm by 2.0 mm), thermal dissipation, Refer to Avago Application Note A004R: and RF characteristics. Electrostatic Discharge Damage and Control. Surface Mount Package SOT-343 /4-lead SC70 Simplifi ed Schematic V 5V d 360 pF 22 nH Pin Connections and Package Marking Input Output 3.3 nH 3 1 2.2 nH 18 pF INPUT GND MGA-52543 4 2 OUTPUT GND & V d Gnd Note: Top View. Package marking provides orientation and identifi cation. 42 = Device Code x = Data code character identifi es month of manufacture42 1 MGA-52543 Absolute Maximum Ratings 2 Thermal Resistance: Symbol Parameter Units Absolute Maximum = 150C/W jc V Maximum Input Voltage V 0.5 Notes: d 1. Operation of this device in excess of any of V Supply Voltage V 7.0 d these limits may cause permanent damage. 2,3 P Power Dissipation mW 425 d 2. T = 25C case P CW RF Input Power dBm +20 in T Junction Temperature C 160 j T Storage Temperature C -65 to 150 STG Electrical Specifi cations T = +25C, Z = 50 , V = 5V, unless noted c o d 3 Symbol Parameter and Test Condition Frequency Units Min. Typ. Max. I test Current drawn N/A mA 45 53 70 3.57 d 1 NF Noise Figure 1.9 GHz dB 1.9 2.3 0.15 0.9 GHz 1.8 1 Gain Gain 1.9 GHz dB 13 14.2 15.5 0.26 0.9 GHz 15 1 IIP3 Input Third Order Intercept Point 1.9 GHz dBm 14 +17.5 2.28 0.9 GHz +18 2 F Minimum Noise Figure 1.9 GHz dB 1.6 min 0.9 GHz 1.5 2 G Associated Gain at F 1.9 GHz dB 15.0 a min 0.9 GHz 16.2 1 OIP3 Output Third Order Intercept Point 1.9 GHz dBm 31.7 0.9 GHz 33.0 1 P Output Power at 1 dB Gain Compression 1.9 GHz dBm +17.4 1dB 0.9 GHz +18 1 RL Input Return Loss 1.9 GHz dB 11 in 0.9 GHz 15 1 RL Output Return Loss 1.9 GHz dB 20 out 0.9 GHz 22 1 2 ISOL Isolation s 1.9 GHz dB -25 12 0.9 GHz -25 Notes: 1. Measurements obtained from a fi xed narrow band tuning described in Figure 1. This circuit designed to optimize Noise Figure and IIP3 while maintaining VSWR better than 2:1. 2. Minimum Noise Figure and Associated Gain at F computed from S-parameter and Noise Parameter data measured in an automated NF system. min 3. Standard deviation data are based on at least 400 part sample size and 11 wafer lots. V d RF Input Input Match Output Match RF and DC Bias Output Figure 1. Block Diagram of Test Fixture. See Figure 7 in the Applications section for an equivalent schematic of 1.9 GHz circuit Figure 11 in the Applications section for 900 MHz circuit. 2