MGA-53589 50MHz to 3GHz High Linear Amplifier Data Sheet Description Features Avago Technologies MGA-53589 is a highly dynamic range Lead-free Option Available low noise amplifier MMIC, housed in a SOT-89 standard Very high linearity at low DC bias power plastic package. Low noise figure MGA-53589 is especially ideal for Cellular/PCS/W-CDMA High OIP3 basestation, wireless LAN, WLL and other systems in the Advanced enhancement mode PHEMT Technology 50MHz to 3GHz frequency range applications. With high Excellent uniformity in product specification IP3 and low noise figure, the MGA-53589 may be utilized SOT-89 standard package as a driver amplifier in the transmit chain and as a second stage LNA in the receive chain. Specifications MGA-53589 is a versertile component and allows circuit At 1.9GHz, Vdd=5V, Idd=52mA (typ) 25C designers to put suitable external matching elements to OIP3 = 37dBm suit its intended application such as max OIP3, lowest NF, Noise Figure = 1.66dB highest return loss and etc. Gain = 15.8 dB P1dB = 18.2dBm Pin connections and Package Marking IRL = 14.4 dB, ORL = 15.7 dB Application Base station radio card 53X High linearity LNA for base stations, WLL, WLAN and other applications in the 50MHz to 6GHz range. 3 2 1 1 2 3 C C RFout RFin GND RFout RFout GND RFin RFin Top View Bottom View Note: Top View : Package marking provides orienation and identification L L 53 = Device Code X = Date Code character indentifies month of manufacturing C Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 40 V C ESD Human Body Model = 250 V Refer to Avago Application Note A004R: Vdd Electrostatic Discharge, Damage and Control. Figure 1. Simplified Schematic Diagram (1) MGA-53589 Absolute Maximum Rating (3) Symbol Parameter Units Absolute Maximum Thermal Resistance (V =5.0V) = 62.5C/W d jc Vin Max input voltage V 0.8 Notes: V Supply Voltage (Id=52mA) V 5.5 d 1. Operation of this device is excess of any of these limits may cause (2) P Power Dissipation mW 400 d permanent damage. 2. Source lead temperature is 25C. P CW RF Input Power dBm 13 in Derate 7.7mW/C for TL > 125C. T Junction Temperature C 150 j 3. Thermal resistance measured using 150C Infra-Red Microscopy T Storage Temperature C -65 to 150 stg Technique. MGA-53589 Electrical Specification T = 25C, Z = 50, V = 5V, unless noted C o d Symbol Parameter and Test Condition Frequency Units Min. Typ. Max. stdev(4) I Current Drawn N/A mA 40 52 70 0.001 d (1) NF Noise Figure 0.9GHz - 1.24 - - (1) 1.9GHz dB - 1.66 2 0.02 (1) 2.4GHz - 1.61 - - (1) Gain Gain 0.9GHz - 18.2 - - (1) 1.9GHz dB 14 15.8 17 0.07 (1) 2.4GHz 15.3 - - (2) (1) OIP3 Output Third Order Intercept Point 0.9GHz - 36.8 - - (1) 1.9GHz dBm 34 37 - 0.66 (1) 2.4GHz - 37.2 - - (1) P1dB Output Power at 1dB Gain Compression 0.9GHz - 18.6 - - (1) 1.9GHz dBm 16.5 18.2 20.5 0.12 (1) 2.4GHz - 17.6 - - (1) PAE Power Added Efficiency at P1dB 0.9GHz - 24.7 - - (1) 1.9GHz % - 27.3 - 0.21 (1) 2.4GHz - 22.7 - - (1) IRL Input Return Loss 0.9GHz - 13.6 - - (1) 1.9GHz dB - 14.4 - 0.29 (1) 2.4GHz - 11.6 - - (1) ORL Output Return Loss 0.9GHz - 20.3 - - (1) 1.9GHz dB - 15.7 - 0.31 (1) 2.4GHz - 14.1 - - (1) ISO Isolation 0.9GHz - 22.1 - - (1) 1.9GHz dB - 22.4 - 0.09 (1) 2.4GHz - 22.3 - - Notes: 1. Measurements obtained from a test circuit described in Figure 34. Input and output matching components are tuned for consistent OIP3 while keeping VSWR better than 2:1. Data obtained are minus board losses. 2. I) Output power level and frequency of two fundamental tones at 0.9GHz F1 & F2 =-0.38dB F1=0.905GHz and F2=0.915GHz II) Output power level and frequency of two fundamental tones at 1.9GHz F1 & F2 =5.49dB F1=1.905GHz and F2=1.915GHz III) Output power level and frequency of two fundamental tones at 2.4GHz F1 & F2 =5dB F1=2.405GHz and F2=2.415GHz 3. Standard deviation data are based on at least 500 pieces samples size taken from 2 wafer lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower specification limits. 2