MGA-61563-TR1G Broadcom

6Ax MGA-61563 Current-Adjustable, Low Noise Amplifi er Data Sheet Description Features Single +3V or + 5V supply Avago Technologies MGA-61563 is an economical, easy-to-use GaAs MMIC amplifi er that off ers excellent High linearity linearity and low noise fi gure for applications from 0.1 Low noise fi gure to 6 GHz. Packaged in an miniature SOT-363 package, it Miniature SOT363 (SC70) package requires half the board space of a SOT-143 package. Unconditionally stable One external resistor is used to set the bias current taken by the device over a wide range. This allows the Lead-free option available designer to use the same part in several circuit posi- tions and tailor the linearity performance (and current Specifi cations at 2 GHz 3V, 41 mA (Typ.) consumption) to suit each position. The MGA-61563 is normally operating with Id set in the 20-60mA range 28.5 dBm OIP3 1.2 dB noise fi gure The output of the amplifi er is matched to 50 (below 2:1 VSWR) across the entire bandwidth and only requires 16.6 dB gain minimum input matching. The amplifi er allows a wide 15.8 dBm P 1dB dynamic range by off ering a 1.2 dB NF coupled with a +28.5 dBm Output IP3. The circuit uses state-of-the-art E-pHEMT technology with proven reliability. On-chip Package Diagram bias circuitry allows operation from a single +3V or +5V power supply, while internal feedback ensures stability (K>1) over all frequencies. Pin Connections and Package Marking OUTPUT GND 1 6 and V d Attention: Observe precautions for GND 2 5 GND handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 0) INPUT 3 4 BIAS Refer to Avago Technologies Application Note A004R: Electrostatic Discharge Damage and Control. Note: Package marking provides orientation and identifi cation: 6A = Device Code x = Date code indicates the month of manufacture. Simplifi ed Schematic Vd I bias Id = I + I ds bias R bias I ds Feedback V bias 4 Input RFout 6 match RFin 3 Bias 1, 2, 5 GND 1 MGA-61563 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum 2 V Device Voltage (pin 6) V 6 d 2 I Device Current (pin 6) mA 100 d 3 P CW RF Input Power (pin 3) dBm 18 in I Bias Reference Current (pin 4) mA 10 ref 4 P Total Power Dissipation mW 500 diss T Channel Temperature C 150 CH T Storage Temperature C -65 to 150 STG 5 Thermal Resistance C/W 115 ch b Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. With the DC (typical bias) and RF applied to the device at board temperature T = 25C. B 4. Total dissipation power is referred to lead x temperature. Tc=92.5C, derate Pdiss at 8.7mW/C for Tc>92.5C. 5. Thermal resistance measured using 150C Liquid Crystal Measurement method. 10 nF + 3V 68 pF 47 nH 620 4 1.2 nH MGA-61563 3 6 1.2 pF 47 pF 47 pF Co-planar with ground. 1 25 length = 0.1 Figure 1. Test circuit of the 2 GHz production test board used for NF, Gain and OIP3 measure- ments. This circuit achieves a trade-off between optimal NF, Gain, OIP3 and input return loss. Circuit losses have been de-embedded from actual measurements. 2