MGA-622P8-TR1G Broadcom

62x MGA-62563 Current-Adjustable, Low Noise Amplifi er Data Sheet Description Features Single +3V supply Avagos MGA-62563 is an economical, easy-to-use GaAs MMIC amplifi er that off ers excellent linearity and low High linearity noise fi gure for applications from 0.1 to 3.5 GHz. Pack- Low noise fi gure aged in an miniature SOT-363 package, it requires half Miniature package the board space of a SOT-143 package. Unconditionally stable One external resistor is used to set the bias current taken Specifi cations by the device over a wide range. This allows the designer to use the same part in several circuit positions and tailor at 500 MHz 3V, 60 mA (Typ.) the linearity performance (and current consumption) to 0.9 dB noise fi gure suit each position. 32.9 dBm OIP3 The output of the amplifi er is matched to 50 (below 22 dB gain 2:1 VSWR) across the entire bandwidth and only requires 17.8 dBm P 1dB minimum input matching. The amplifi er allows a wide Simplifi ed Schematic dynamic range by off ering a 0.9 dB NF coupled with a +32.9 dBm Output IP3. The circuit uses state-of-the-art Vd E-pHEMT technology with proven reliability. On-chip bias circuitry allows operation from a single +3V power I Id = I + I bias ds bias supply, while internal feedback ensures stability (K>1) over all frequencies. R bias I ds Pin Connections and Package Marking Feedback V bias 4 6 Input RFout match 3 RFin Bias OUTPUT MGA-86563 Pkg GND 1 6 and V d 1, 2, 5 GND 2 5 GND GND INPUT 3 4 BIAS Note: Package marking provides orientation and identifi cation: 62 = Device Code x = Date code indicates the month of manufacture. 1 MGA-62563 Absolute Maximum Ratings Notes: Absolute 1. Operation of this device above any one of Symbol Parameter Units Maximum these parameters may cause permanent 2 V Device Voltage (pin 6) V 6 damage. d 2. Bias is assumed at DC quiescent conditions. 2 I Device Current (pin 6) mA 100 d 3. With the DC (typical bias) and RF applied to 3 P CW RF Input Power (pin 3) dBm 21 in the device at board temperature T = 25C. B I Bias Reference Current (pin 4) mA 12 4. Total dissipation power is referred to board ref (package belly) temperature T = 85C, B 4 Total Power Dissipation mW 600 P diss P is required to derate at 10 mW/C for diss T Channel Temperature C 150 T > 85C. B CH 5. Thermal resistance measured using 150C T Storage Temperature C -65 to 150 STG Liquid Crystal Measurement method. 5 Thermal Resistance C/W 97 ch b + 10 pF 3V 68 pF 47 nH 240 4 6.8 nH MGA-62563 3 6 100 pF 100 pF 1 25 Figure 1. Test circuit of the 0.5 GHz production test board used for NF, Gain and OIP3 measurements. This circuit achieves a trade-off between optimal NF, Gain, OIP3 and input return loss. Circuit losses have been de-embedded from actual measurements. Wire Supplying Vbias from Agilent 4142 Blocking Cap RF Input 62x Direct to Ground Direct to Ground Bias RF Output Bias Tee Vdd supply from Reference Agilent 4142 Planes Figure 1b. A diagram showing the connection to the DUT during an S and Noise parameter measurement using an automated tuner system. 2 62x