MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies MGA-633P8 is an economical, easy- Ultra Low noise Figure to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has High linearity performance low noise and high linearity achieved through the use of 1 GaAs E-pHEMT Technology Avago Technologies proprietary 0.25um GaAs Enhance- 3 ment-mode pHEMT process. It is housed in a miniature Low cost small package size: 2.0 x 2.0 x 0.75 mm 3 2.0 x 2.0 x 0.75mm 8-pin Quad-Flat-Non-Lead (QFN) Excellent uniformity in product specifications package. It is designed for optimum use from 450MHz up Tape-and-Reel packaging option available to 2GHz. The compact footprint and low profile coupled with low noise, high gain and high linearity make the Specifications MGA-633P8 an ideal choice as a low noise amplifier for cellular infrastructure for GSM and CDMA. For optimum 900MHz 5V, 54mA performance at higher frequency from 1.5GHz to 2.3GHz, 18 dB Gain the MGA-634P8 is recommended, and from 2.3GHz to 0.37 dB Noise Figure 4GHz, the MGA-635P8 is recommended. Both MGA-634P8 15dB Input Return Loss and MGA-635P8 share the same package and pinout as MGA-633P8 37 dBm Output IP3 22 dBm Output Power at 1dB gain compression Pin Configuration and Package Marking 3 2.0 x 2.0 x 0.75 mm 8-lead QFN Applications Low noise amplifier for cellular infrastructure for GSM 1 8 8 1 and CDMA. 2 7 7 2 Other ultra low noise application. 3 33X 6 6 3 4 5 5 4 Simplified Schematic Top View Bottom View Vdd Pin1 Vbias Pin5 Not Used Rbias Pin2 RFinput Pin6 Not Used C6 R1 R2 C5 Pin3 Not Used Pin7 RFoutput / Vdd Pin4 Not Used Pin8 Not Used Centre tab - Ground C4 C3 L1 L2 Note: 1 8 bias Package marking provides orientation and identification C1 C2 RFin RFout 2 7 33 = Device Code 3 6 X = Month Code 4 5 Notes: Attention: Observe precautions for The schematic is shown with the assumption that similar PCB is used handling electrostatic sensitive devices. for all MGA-633P8, MGA-634P8 and MGA-635P8. Detail of the components needed for this product is shown in Table 1. ESD Machine Model = 90 V (Class A) Enhancement mode technology employs positive gate voltage, ESD Human Body Model = 600 V (Class 1B) thereby eliminating the need of negative gate voltage associated Refer to Avago Application Note A004R: with conventional depletion mode devices. Electrostatic Discharge, Damage and Control. Good RF practice requires all unused pins to be earthed. 1 Absolute Maximum Rating T =25C Thermal Resistance A 2 Symbol Parameter Units Absolute Max. Thermal Resistance (V = 5.0 V, I = 54 mA), = 72C/W dd dd jc V Device Voltage, RF output to ground V 5.5 dd Notes: I Drain Current mA 90 dd 1. Operation of this device in excess of any of P CW RF Input Power dBm +20 max these limits may cause permanent damage. (V = 5.0 V, I = 54 mA) 2. Thermal resistance measured using Infra- dd dd Red Measurement Technique. 3 P Total Power Dissipation W 0.495 diss 3. Power dissipation with unit turned on. T Junction Temperature C 150 Board temperature T is 25C. Derate at j B 13.89mW/C for T >114C. B T Storage Temperature C -65 to 150 STG 1, 4 Electrical Specifications RF performance at T = 25C, V =5V, R =6.8kOhm, 900MHz, measured on demo board in Figure 5 with component A dd bias list in Table1 for 900 MHz matching. Symbol Parameter and Test Condition Units Min. Typ. Max. I Drain Current mA 39 54 67 dd Gain Gain dB 16.5 18 19.5 2 OIP3 Output Third Order Intercept Point dBm 34 37 3 NF Noise Figure dB 0.37 0.6 OP1dB Output Power at 1dB Gain Compression dBm 22 IRL Input Return Loss, 50 source dB 15 ORL Output Return Loss, 50 load dB 21 REV ISOL Reverse Isolation dB 21 Notes: 1. Measurements at 900 MHz obtained using demo board described in Figure 1. 2. OIP3 test condition: F = 900 MHz, F = 901 MHz with input power of -15dBm per tone. RF1 RF2 3. For NF data, board losses of the input have not been de-embedded. 4. Use proper bias, heatsink and derating to ensure maximum device temperature is not exceeded. See absolute maximum ratings and application note for more details. 2