MGA-645T6 Low Noise Amplier with Bypass/Shutdown Mode in Low Prole Package Data Sheet Description Features 3 Avago Technologies MGA-645T6 is an economical, 2.0 x 1.3 x 0.4 mm 6-lead Ultra Thin Package easy-to-use GaAs MMIC Low Noise Amplier (LNA) with Low bias current Bypass/ Shutdown mode. The LNA has low noise and Simple matching network high linearity achieved through the use of Avago Tech- nologies proprietary 0.5um GaAs Enhancement-mode 1.5 GHz 3 GHz operating range pHEMT process. The Bypass/Shutdown mode enables Adjustable bias current the LNA to be bypassed during high input signal power Low Noise Figure and reduce current consumption. It is housed in a low prole 2 x 1.3 x 0.4mm 6-pin Ultra Thin Package. The Bypass/Shutdown Mode using a single pin compact footprint and low prole coupled with low Low current consumption in Bypass Mode, <100uA noise, high linearity make the MGA-645T6 an ideal choice Fully matched to 50 ohm in Bypass Mode as a low noise amplier for mobile receiver in the WiMax, WLAN(802.11b/g), WiBro and DMB applications. High Linearity (LNA and Bypass Mode) Low prole package Component Image Typical Performance Note: Package marking provides . 2.4 GHz 3V, 7mA (typ): orientation and identication 4FYM 4F = Product Code 15 dB Gain Y = Year of manufacture M = Month of manufacture 1.1 dB Noise Figure with 9dB Input Return Loss +7 dBm Input IP3 Pin Conguration -5 dBm Input Power at 1dB gain compression Pin 6 Pin 1 4.5 dB Insertion Loss in Bypass Mode (Vbypass) (Not Used) Pin 5 Pin 2 16dBm IIP3 in Bypass Mode (Pin = -20dBm) GND (RF IN) (RF OUT) <100uA current consumption in Bypass & Shutdown Pin 4 Pin 3 Mode (GND) (VDD) Applications Top View Low noise amplier for GPS, WiMax, WLAN, WiBro and Simplied Schematic DMB applications. MGA-645T6 Other ultra low noise applications in the 1.5 3 GHz 1 6 Vbypass bias/control band L3 2 5 Attention: Observe precautions for handling RFin RFout electrostatic sensitive devices. ESD Machine Model = 60 V L2 3 4 L1 ESD Human Body Model = 200 V Vdd Refer to Avago Application Note A004R: C1 C2 Electrostatic Discharge, Damage and Control. 1 Absolute Maximum Rating TA=25C 2,3 Thermal Resistance Symbol Parameter Units Absolute Max. (Vdd = 3.0V, Id=7mA), jc = 60 C/W Vdd Device Voltage V 4 Notes: V Control Voltage V (Vdd-0.3) bypass 1. Operation of this device in excess of any of these limits may cause permanent damage. P CW RF Input Power dBm +15 in,max 2. Thermal resistance measured using Infra- 3 P Total Power Dissipation mW 80 diss Red Measurement Technique. 3. Board temperature T is 25 C , for T >146 B B T Junction Temperature C 150 j C derate the device power at 14mW per C T Storage Temperature C -65 to 150 rise in Board (package belly) temperature. STG 4 Product Consistency Distribution Charts Figure 3. Ids 2.4 GHz , Vd 3V Vbypass 1.8 V, Figure 1. Gain 2.4 GHz , Vd 3V Vbypass 1.8 V, Figure 2. NF 2.4 GHz , Vd 3V Vbypass 1.8 V, Nominal=7.0, USL=13.0 LSL=13.5, Nominal=15.0, USL=16.5 Nominal=1.1, USL=1.5 Notes: 4. Distribution data sample size are 500 samples taken from 3 dierent wafers and 3 dierent lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 5,7 Electrical Specications T = 25 C, Vdd =3V, Vbypass = 1.8V, RF measurement at 2.4 GHz, measured on demo board (see Fig. 4) unless otherwise A specied. Symbol Parameter and Test Condition Units Min. Typ. Max. Id Bias Current mA - 7 13 GainGain dB13.51516.5 NF Noise Figure (Typ.Vbypass=1.8V) dB - 1.1 1.5 6 IIP3 Input Third Order Intercept Point dBm - +7 - OP1dB Output Power at 1dB Gain Compression dBm - +9 - S11 Input Return Loss, 50 source dB - -9 - S22 Output Return Loss, 50 load dB - -15 - S12 Reverse Isolation dB - -27 - S21 2 Bypass Mode Loss (Vbypass = 0) dB - -4.5 - BYPASS IIP3 Bypass Mode IIP3 (tested at -20dBm input Power) dBm - 16 - BYPASS Id Bypass Mode current uA - 80 - BYPASS Notes: 5. Measurements at 2.4GHz obtained using demo board described in Figure 1, with component values on Figure 2 (2.3 2.4 GHz) 6. 2.4GHz I test condition: F = 2.395 GHz, F = 2.4 GHz with input power of -30dBm per tone. IP3 RF1 RF2 7. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note for more details. 2