MGA-64606 Low Noise Amplifi er with switchable Bypass/Shutdown Mode in Low Profi le Package Data Sheet Description Features Avago Technologies MGA-64606 is an economical, Low current consumption easy-to-use GaAs MMIC Low Noise Amplifi er (LNA) with Adjustable bias current Bypass/ Shutdown mode. The LNA has low noise and high 1.5 GHz 3 GHz operating range linearity achieved through the use of Avago Technologies proprietary 0.25 m GaAs Enhancement-mode pHEMT Low Noise Figure process. The Bypass/Shutdown mode enables the LNA to Low current consumption in Bypass Mode, <100 A be bypassed during high input signal power and reduce Fully matched to 50 ohm in Bypass Mode current consumption. It is housed in a low profi le 2.0 x 1.3 3 x 0.5mm 6-pin Ultra Thin Package. The compact footprint High Linearity (LNA and Bypass Mode) and low profi le coupled with low noise, high linearity make Low profi le package the MGA-64606 an ideal choice as a low noise amplifi er for mobile receiver in the WiMAX, WLAN(802.11b/g), WiBro Typical Performance and DMB applications. 2.4 GHz 3V , 7mA (Typ): Component Image 15.3 dB Gain 3 2.0 x 1.3 x 0.5 mm 6-lead Ultra Thin Package 0.95 dB Noise Figure +5.0 dBm Input IP3 Note: Package marking provides -3.0 dBm Input Power at 1 dB gain compression orientation and identifi cation 64X 3.8 dB Insertion Loss in Bypass Mode 64 = Product Code X = Month Code 12 dBm IIP3 in Bypass Mode (Pin = -20 dBm) <100 A current consumption in Bypass mode Pin Confi guration Applications Pin 1 (Vbias) Pin 6 (Vsd) Low noise amplifi er for GPS, WiMAX, WLAN, WiBro and DMB applications. Pin 2 (RFin) GND Pin 5 (RFOut) Other ultra low noise applications in the 1.5 3 GHz band. Pin 3 (Gnd) Pin 4 (Vdd) Simplifi ed Schematic TOP VIEW R 1 6 Bias / VBias VSD Control L Attention: Observe precautions for 2 5 RF INRF OUT handling electrostatic sensitive devices. L ESD Machine Model = 60 V L R LNA 3 4 Vdd ESD Human Body Model = 300 V C C Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. 1 Absolute Maximum Rating T = 25 C Thermal Resistance A 2,3 Symbol Parameter Units Absolute Maximum Thermal Resistance (V = 3.0 V, Id = 7 mA), dd V Device Voltage, RF Output to Ground V 5 dd = 60 C/W jc Vbias Control Voltage V (Vdd-0.3) Notes: P CW RF Input Power dBm +12 in,max 1. Operation of this device in excess of any of these limits may cause permanent damage. P Total Power Dissipation mW 94 diss 2. Thermal resistance measured using Infra-Red T Junction Temperature C 150 Measurement Technique. j 3. Board temperature (T ) is 25 C. For T >146 C, b b T Storage Temperature C -65 to 150 STG derate the device power at 14 mW per C rise in Board (pakcage belly) temperature. 1 Product Consistency Distribution charts LSL USL USL 13.5 14 14.5 15 15.5 16 16.5 17 17.5 0.8 0.9 1 1.1 1.2 1.3 Figure 1. Gain 2.4 GHz,Vdd 3 V Vbias 1.8 V Figure 2. NF 2.4 GHz,Vdd 3 V Vbias 1.8 V LSL = 14.3 dB, Nominal = 15.3 dB, USL = 16.7 dB Nominal = 0.95 dB, USL = 1.2 dB USL Note: 1. Distribution data sample size is 3000 samples taken from 3 diff erent wafers and 3 diff erent lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 45 6 78 9 10 11 12 13 Figure 3. Idd 2.4 GHz, Vdd 3 V Vbias 1.8 V Nominal = 7.0 mA,USL = 10.0 mA 2