MGA-65606 Low Noise Amplifi er with switchable Bypass/Shutdown Mode in Low Profi le Package Data Sheet Description Features Avago Technologies MGA-65606 is an economical, easy- Low current consumption to-use GaAs MMIC Low Noise Amplifi er (LNA) with Bypass/ Adjustable bias current Shutdown mode. The LNA has low noise and high linearity Simple matching network achieved through the use of Avago Technologies propri- etary 0.25 m GaAs Enhancement-mode pHEMT process. Broadband operation (2.5 4) GHz The Bypass/Shutdown mode enables the LNA to be Low Noise Figure bypassed during high input signal power and reduce Low current consumption in Bypass Mode, <100 A current consumption. It is housed in a low profi le 2.0 x 1.3 3 x 0.5 mm 6-pin Ultra Thin Package. The compact footprint Fully matched to 50 ohm in Bypass Mode and low profi le coupled with low noise, high linearity make High Linearity (LNA and Bypass Mode) the MGA-65606 an ideal choice as a low noise amplifi er for Low profi le package mobile and CPE receivers in the WiMAX and WLL (2.5 4) GHz band. Typical Performance Component Image 3.5 GHz 3V, 10mA (Typ): 3 2.0 x 1.3 x 0.5 mm 6-lead Ultra Thin Package 15.3 dB Gain 1.05 dB Noise Figure Note: Package marking provides +5.7 dBm Input IP3 orientation and identifi cation 65X -2.4 dBm Input Power at 1 dB gain compression 65 = Product Code X = Month Code 4.2 dB Insertion Loss in Bypass Mode 17 dBm IIP3 in Bypass Mode (Pin = -20 dBm) Pin Confi guration <100 A current consumption in Bypass mode Pin 1 (Vbias) Pin 6 (Vsd) Applications Low noise amplifi er for WiMAX, Wireless Local Loop. Pin 2 (RFin) GND Pin 5 (RFOut) Other ultra low noise applications in the 2.5 4 GHz Pin 3 (Gnd) Pin 4 (Vdd) band. TOP VIEW Simplifi ed Schematic R 1 6 Bias / VBias VSD Control Attention: Observe precautions for L handling electrostatic sensitive devices. 2 5 RF INRF OUT ESD Machine Model = 50 V L L R ESD Human Body Model = 300 V LNA 3 4 Vdd Refer to Avago Application Note A004R: C C Electrostatic Discharge, Damage and Control. 1 Absolute Maximum Rating T = 25 C Thermal Resistance A 2,3 Symbol Parameter Units Absolute Maximum Thermal Resistance (V = 3.0 V, Id = 10 mA), dd V Device Voltage, RF Output to Ground V 5 dd = 80 C/W jc Vbias Control Voltage V (Vdd-0.3) Notes: P CW RF Input Power dBm +12 in,max 1. Operation of this device in excess of any of these limits may cause permanent damage. P Total Power Dissipation mW 104 diss 2. Thermal resistance measured using Infra-Red T Junction Temperature C 150 Measurement Technique. j 3. Board temperature (T ) is 25 C, for T >146 C, b b T Storage Temperature C -65 to 150 STG derate the device power at 14 mW per C rise in Board (pakcage belly) temperature. 1 Product Consistency Distribution charts LSL USL USL 13 14 15 16 17 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 Figure 1. Gain 3.5 GHz,Vdd 3V Vbias 2.7 V Figure 2. NF 3.5 GHz,Vdd 3 V Vbias 2.7 V LSL = 14 dB, Nominal = 15.3 dB, USL = 17 dB Nominal = 1.05 dB, USL = 1.35 dB USL Note: 1. Distribution data sample size is 3000 samples taken from 3 diff erent wafers and 3 diff erent lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 78 9 10 11 12 13 Figure 3. Idd 3.5 GHz,Vdd 3 V Vbias 2.7 V Nominal = 10.0 mA, USL = 12.0 mA 2