MGA-685T6 Current-Adjustable, Low Noise Amplifier Data Sheet Description Features The MGA-685T6 is an easytouse GaAs MMIC amplifier Single +3V supply that offer excellent linearity and low noise figure for ap - High Linearity plication from 0.1 to 1.5 GHz. The device is housed in Low Noise figure Ultra Thin Small Leadless Package (UTSLP) with 0.4mm 3 package thickness. Miniature Surface Mount 2.0x1.3x0.4 mm 6-lead UTSLP One external resistor is used to set the bias current from 5 mA to 30 mA. This allows the designer to use the same Specifications at 500 MHz 3V 10 mA (Typ.) part in several circuit positions and tailor the linearity 0.93 dB Noise Figure performance (and current consumption) to suit each position. 18.7 dBm OIP3 18.9 dB Gain The output of the amplifier is matched to 50 (below 2:1 VSWR) across the entire bandwidth and only requires 17.3 dBm P1dB minimum input matching. The amplifier allows a wide Applications dynamic range by offering a 0.93 dB NF coupled with a +18.7 dBm Output IP3. The circuit uses state-of-the art E- LNA for DVB-T, DVB-H, T-DMB, ISDB-T, DAB and MediaFLO pHEMT technology with proven reliability. Package Marking & Orientation Pin 6 : Bias Pin 1 : NC Pin 5 : RF Out 68YM68YM Pin 2 : RF IN and Vd Pin 4 : NC Pin 3 : NC Top View Bottom View 68 = Device Code Y = Year of manufacture M = Month of manufacture 1 Table 1. Absolute Maximum Rating Symbol Parameter Units Absolute Max. 2 Vd Device Voltage (Pin 5) V 6 2 Id Device Current (Pin 5) mA 100 3 P CW RF Input Power (Pin 2) dBm +21 in,max I Bias Reference Current (Pin 6) mA 12 ref 4 P Total Power Dissipation mW 600 diss T Channel Temperature C 150 CH T Storage Temperature C 150 STG 5 q Thermal Resistance C / W 97 ch b Notes: 1. Operation of this device above any one of there parameters may cause permanent damage. 2. Bias is assumed DC quiescent conditions. 3. With the DC (typical bias) and RF applied to the device at board temperature T = 25 C. B 4. Total dissipation power is referred to board temperature, T = 92 C, derate P at 10 mW/ C for T > 92 C. B diss B 5. Thermal resistance is measured from junction to board using IR method. Table 2. Electrical Specifications T = 25 C, Freq = 0.5 GHz, Vd = 3V (unless otherwise specified) A Symbol Parameter Units Min. Typ Max. 1,2 Id Device Current mA 7 10 16 1,2 NF Noise Figure in test circuit dB - 0.93 1.50 1,2 Gain Associated Gain in test circuit dB 17.50 18.90 20.50 1,2,3 OIP3 Output 3rd Order Intercept in test circuit dBm 16.50 18.70 - 1,2 P1dB Output Power at 1dB Gain Compression in test dBm - 17.30 - circuit 1,2 IRL Input Return Loss in test circuit dB - -8.10 - 1,2 ORL Output Return Loss in test circuit dB - -16.40 - Notes: 1. Circuit losses have been de-embedded from actual measurements. 2. Measurement in table 2 uses the test board and circuit schematic shows in figure 1a. Data based on 500 part sample size from two wafer lots during initial characterization of this product. 3. 0.5 GHz OIP3 Test Condition : F1 = 0.5 GHz, F2 = 0.505 GHz, Pin = -20 dBm 2