81x MGA-81563 0.16 GHz 3 V, 14 dBm Amplifier Data Sheet Description Features Avagos MGA-81563 is an economical, easy-to-use GaAs Lead-free Option Available MMIC amplifier that offers excellent power and low noise +14.8 dBm P at 2.0 GHz 1dB figure for applications from 0.1 to 6 GHz. Packaged in +17 dBm P at 2.0 GHz sat an ultra-miniature SOT-363 package, it requires half the board space of a SOT-143 package. Single +3V Supply 2.8 dB Noise Figure at 2.0 GHz The output of the amplifier is matched to 50 (better than 2.1:1 VSWR) across the entire bandwidth. The input is 12.4 dB Gain at 2.0 GHz partially matched to 50 (better than 2.5:1 VSWR) below Ultra-miniature Package 4 GHz and fully matched to 50 (better than 2:1 VSWR) Unconditionally Stable above. A simple series inductor can be added to the in- put to improve the input match below 4 GHz. The ampli- Applications fier allows a wide dynamic range by offering a 2.7 dB NF Buffer or Driver Amp for PCS, PHS, ISM, SATCOM and coupled with a +27 dBm Output IP . 3 WLL Applications The circuit uses state-of-the-art PHEMT technology High Dynamic Range LNA with proven reliability. On-chip bias circuitry allows op- eration from a single +3 V power supply, while resistive Simplified Schematic feedback ensures stability (K>1) over all frequencies and temperatures. OUTPUT Surface Mount Package: SOT-363 (SC-70) and V d 6 INPUT 3 BIASBIAS Pin Connections and Package Marking GND OUTPUT GND 1 6 1, 2, 4, 5 and V d GND 2 5 GND Attention: Observe precautions for INPUT 3 4 GND handling electrostatic sensitive devices. ESD Human Body Model (Class 0) Note: Package marking provides orientation and identification. Refer to Avago Application Note A004R: 81 = Device Code Electrostatic Discharge Damage and Control. = Date code character identifies month of manufactureMGA-81563 Absolute Maximum Ratings 2 Absolute Thermal Resistance : 1 Symbol Parameter Units Maximum = 220C/W ch-c V Device Voltage, RF Output V 6.0 d Notes: to Ground 1. Permanent damage may occur if any of V Device Voltage, Gate V -6.0 gd these limits are exceeded. to Drain 2. T = 25C (T is defined to be the C C temperature at the package pins where V Range of RF Input Voltage V +0.5 to -1.0 in contact is made to the circuit board.) to Ground P CW RF Input Power dBm +13 in T Channel Temperature C 165 ch T Storage Temperature C -65 to 150 STG MGA-81563 Electrical Specifications, TC = 25C, ZO = 50 , Vd = 3 V 2 Symbol Parameters and Test Conditions Units Min. Typ. Max. Std Dev 1 Gtest Gain in test circuit f = 2.0 GHz 10.5 12.4 14.5 0.44 1 NFtest Noise Figure in test circuit f = 2.0 GHz 2.8 3.8 0.21 NF50 Noise Figure in 50 system f = 0.5 GHz dB 3.1 0.21 f = 1.0 GHz 3.0 f = 2.0 GHz 2.7 f = 3.0 GHz 2.7 f = 4.0 GHz 2.8 f = 6.0 GHz 3.5 S21 2 Gain in 50 system f = 0.5 GHz dB 12.5 0.44 f = 1.0 GHz 12.5 f = 2.0 GHz 12.3 = 3.0 GHz 11.8 f = 4.0 GHz 11.4 f = 6.0 GHz 10.2 P Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 15.1 0.86 1 dB f = 1.0 GHz 14.8 f = 2.0 GHz 14.8 f = 3.0 GHz 14.8 f = 4.0 GHz 14.8 f = 6.0 GHz 14.7 IP Output Third Order Intercept Point f = 2.0 GHz dBm +27 1.0 3 VSWR Input VSWR f = 2.0 GHz 2.7:1 in VSWR Output VSWR f = 2.0 GHz 2.0:1 out I Device Current mA 31 42 51 d Notes: 1. Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section. 2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical specification. 2