82x MGA-82563 0.1 6 GHz 3 V, 17 dBm Amplifier Data Sheet Description Features Avagos MGA-82563 is an economical, easy-to-use GaAs Lead-free Option Available MMIC amplifier that offers excellent power and low noise +17.3 dBm P at 2.0 GHz 1 dB figure for applications from 0.1 to 6 GHz. Packaged in an +20 dBm P at 2.0 GHz sat ultra-miniature SOT-363 package, it requires half the board space of a SOT-143 package. Single +3V Supply 2.2 dB Noise Figure at 2.0 GHz The input and output of the amplifier are matched to 50 (below 2:1 VSWR) across the entire bandwidth, 13.2 dB Gain at 2.0 GHz eliminating the expense of external matching. The am- Ultra-miniature Package plifier allows a wide dynamic range by offering a 2.2 dB Unconditionally Stable NF coupled with a +31 dBm Output IP . 3 The circuit uses state-of-the-art PHEMT technology Applications with proven reliability. On-chip bias circuitry allows op- Buffer or Driver Amp for PCS, eration from a single +3 V power supply, while resistive PHS, ISM, SATCOM and WLL Applications feedback ensures stability (K>1) over all frequencies and High Dynamic Range LNA temperatures. Surface Mount Package Simplified Schematic SOT-363 (SC-70) OUTPUT and V d 6 INPUT 3 Pin Connections and Package Marking BIAS BIAS OUTPUT GND 1 6 and V d GND 2 5 GND GND 1, 2, 4, 5 INPUT 3 4 GND Attention: Observe precautions for Note: Package marking provides orientation and identification. handling electrostatic sensitive devices.82 = Device Code ESD Human Body Model (Class 0) = Date code character identifies month of manufacture Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control.MGA-82563 Absolute Maximum Ratings 2 Thermal Resistance : Absolute 1 Symbol Parameter Units Maximum = 180C/W ch-c V Device Voltage, RF Output V 5.0 d Notes: to Ground V Device Voltage, Gate V -6.0 1. Permanent damage may occur if any gd to Drain of these limits are exceeded. V Range of RF Input Voltage V +0.5 to -1.0 2. T = 25C (T is defined to be the tem- in C C to Ground perature at the top of the package.) P CW RF Input Power dBm +13 in T Channel Temperature C 165 ch T Storage Temperature C -65 to 150 STG MGA-82563 Electrical Specifications, T = 25C, Z = 50 , V = 3 V C O d 2 Symbol Parameters and Test Conditions Units Min. Typ. Max. Std Dev 1 G Gain in test circuit f = 2.0 GHz 12.0 13.2 15 0.35 test 1 NF Noise Figure in test circuit f = 2.0 GHz 2.2 2.9 0.20 test NF Noise Figure in 50 system f = 0.5 GHz dB 2.3 50 f = 1.0 GHz 2.2 f = 2.0 GHz 2.2 0.20 f = 3.0 GHz 2.2 f = 4.0 GHz 2.4 f = 6.0 GHz 2.7 2 S Gain in 50 system f = 0.5 GHz dB 14.7 21 f = 1.0 GHz 14.5 f = 2.0 GHz 13.5 0.35 f = 3.0 GHz 12.1 f = 4.0 GHz 10.7 f = 6.0 GHz 8.8 P Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 17.4 1 dB f = 1.0 GHz 17.5 f = 2.0 GHz 17.3 0.54 f = 3.0 GHz 17.1 f = 4.0 GHz 17.0 f = 6.0 GHz 16.8 IP Output Third Order Intercept Point f = 2.0 GHz dBm +31 1.0 3 VSWR Input VSWR f = 0.25.0 GHz 1.8:1 in VSWR Output VSWR f = 0.25.0 GHz 1.2:1 out I Device Current mA 63 84 101 d Notes: 1. Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section. 2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial character- ization of this product, and is intended to be used as an estimate for distribution of the typical specification. 2