MGA-83563-BLKG Broadcom

83x MGA-83563 +22 dBm P 3 V Power Amplifier SAT for 0.5 6 GHz Applications Data Sheet Description Features Lead-free Option Available Avagos MGA-83563 is an easy-to-use GaAs RFIC amplifier that offers excellent power output and efficiency. This +22 dBm P at 2.4 GHz, 3.0 V SAT part is targeted for 3V applications where constant-en- +23 dBm P at 2.4 GHz, 3.6V SAT velope modulation is used. The output of the amplifier is 22 dB Small Signal Gain at 2.4 GHz matched internally to 50. However, an external match Wide Frequency Range 0.5 to 6 GHz can be added for maximum efficiency and power out (PAE = 37%, P = 22 dBm). The input is easily matched o Single 3V Supply to 50 . 37% Power Added Efficiency Due to the high power output of this device, it is recom- Ultra Miniature Package mended for use under a specific set of operating condi- tions. The thermal sections of the Applications Informa- tion explain this in detail. Applications The circuit uses state-of-the-art PHEMT technology with Amplifier for Driver and Output Applications proven reliability. On-chip bias circuitry allows operation from single supply voltage. Surface Mount Package Equivalent Circuit (Simplified) SOT-363 (SC-70) OUTPUT and V V d2 d1 INPUT BIAS Pin Connections and Package Marking BIAS GROUND OUTPUT V16 d1 and V d2 GND25 GND Attention: Observe precautions for handling electrostatic sensitive devices. INPUT GND 34 ESD Human Body Model (Class 0) Refer to Avago Application Note A004R: Note: Electrostatic Discharge Damage and Control. Package marking provides orientation and identification x is date code.83 83 6 1 x 10 Hrs MTTF MGA-83563 Absolute Maximum Ratings 2 Thermal Resistance : Absolute = 175C/W 1 ch to c Symbol Parameter Units Maximum V Maximum DC Supply Voltage V 4 Notes: 1. Operation of this device above any one P CW RF Input Power dBm +13 in of these limits may cause permanent T Channel Temperature C 165 damage. ch 2. T = 25C (T is defined to be the tempera- C C T Storage Temperature C -65 to 150 STG ture at the package pins where contact is made to the circuit board). 800 3.0V 700 20 pF 2.2 nH18 nH 50 pF 600 RF 500 OUTPUT 1 pF 400 RF 1.2 nH 300 INPUT 200 Figure 1. MGA-83563 Final Production Test Circuit. 100 0 10 30 50 70 90 110 130 150 CASE TEMPERATURE (C) V d Temperature/Power Derating Curve. 20 pF L1 Bias Tuner RF Tee OUTPUT Tuner RF INPUT Circuit A: L1 = 2.2 nH for 0.1 to 3 GHz Circuit B: L1 = 0 nH (capacitor as close as possible) for 3 to 6 GHz Figure 2. MGA-83563 Test Circuit for Characterization. 2 POWER DISSIPATED AS HEAT (mW) Pd = (VOLTAGE) x (CURRENT) (Pout)